K6R4016C1C-C, K6R4016C1C-E, K6R4016C1C-I

CMOS SRAM

PRELIMPreliminaryPPPPPPPPPINARY

Rev 4.0

- 3 -

September 2001

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

CS

Vcc

Vss

WE

SOJ/

OE

UB

LB

Vss

Vcc

N.C

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

24

23

TSOP2

LB

OE

A0

A1

A2

N.C

I/O1

UB

A3

A4

CS

I/O9

I/O2

I/O3

A5

A6

I/O11

I/O10

Vss

I/O4

A17

A7

I/O12

Vcc

Vcc

I/O5

N.C

A16

I/O13

Vss

I/O7

I/O6

A14

A15

I/O14

I/O15

I/O8

N.C

A12

A13

WE

I/O16

N.C

A8

A9

A10

A11

N.C

1

2

3

4

5

6

A

B

C

D

E

F

G

H

48-CSP

ABSOLUTE MAXIMUM RATINGS*

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.

Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Parameter

Symbol

Rating

Unit

V

-0.5 to 7.0

V

Power Dissipation

1.0

W

Storage Temperature

-65 to 150

°C

Operating Temperature

Commercial

0 to 70

°C

Extended

-25 to 85

°C

Industrial

-40 to 85

°C

PIN FUNCTION

Pin Name

Pin Function

Address Inputs

WE

Write Enable

CS

Chip Select

OE

Output Enable

LB

UB

Data Inputs/Outputs

Power(+5.0V)

Ground

N.C

No Connection