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K6R4016C1C-E Datasheet(PDF) 3 Page - Samsung semiconductor |
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K6R4016C1C-E Datasheet(HTML) 3 Page - Samsung semiconductor |
3 / 11 page K6R4016C1C-C, K6R4016C1C-E, K6R4016C1C-I CMOS SRAM PRELIMPreliminaryPPPPPPPPPINARY Rev 4.0 - 3 - September 2001 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 A0 A1 A2 A3 A4 CS I/O1 I/O2 I/O3 I/O4 Vcc Vss I/O5 I/O6 I/O7 I/O8 WE A5 A6 A7 A8 A9 PIN CONFIGURATION (Top View) SOJ/ A17 A16 A15 OE UB LB I/O16 I/O15 I/O14 I/O13 Vss Vcc I/O12 I/O11 I/O10 I/O9 N.C A14 A13 A12 A11 A10 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 TSOP2 LB OE A0 A1 A2 N.C I/O1 UB A3 A4 CS I/O9 I/O2 I/O3 A5 A6 I/O11 I/O10 Vss I/O4 A17 A7 I/O12 Vcc Vcc I/O5 N.C A16 I/O13 Vss I/O7 I/O6 A14 A15 I/O14 I/O15 I/O8 N.C A12 A13 WE I/O16 N.C A8 A9 A10 A11 N.C 1 2 3 4 5 6 A B C D E F G H 48-CSP ABSOLUTE MAXIMUM RATINGS* * Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Parameter Symbol Rating Unit Voltage on Any Pin Relative to VSS VIN, VOUT -0.5 to VCC+0.5 V Voltage on VCC Supply Relative to VSS VCC -0.5 to 7.0 V Power Dissipation PD 1.0 W Storage Temperature TSTG -65 to 150 °C Operating Temperature Commercial TA 0 to 70 °C Extended TA -25 to 85 °C Industrial TA -40 to 85 °C PIN FUNCTION Pin Name Pin Function A0 - A17 Address Inputs WE Write Enable CS Chip Select OE Output Enable LB Lower-byte Control(I/O1~I/O8) UB Upper-byte Control(I/O9~I/O16) I/O1 ~ I/O16 Data Inputs/Outputs VCC Power(+5.0V) VSS Ground N.C No Connection |
Similar Part No. - K6R4016C1C-E |
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Similar Description - K6R4016C1C-E |
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