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MIC2194BM Datasheet(PDF) 8 Page - Micrel Semiconductor |
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MIC2194BM Datasheet(HTML) 8 Page - Micrel Semiconductor |
8 / 10 page MIC2194 Micrel MIC2194 8 October 2002 1.5V Typical 140mV Hysteresis (typical) EN/UVLO (3) MIC2194 VIN R1 R2 Bias Circuitry Figure 3. UVLO Circuitry The line voltage turn on trip point is: VV R RR INPUT ENABLE THRESHOLD _ =× + 2 12 where: V THRESHOLD is the voltage level of the internal comparator reference, typically 1.5V. The input voltage hysteresis is equal to: VV RR R INPUT HYST HYST _ =× + 12 2 where: V HYST is the internal comparator hysteresis level, typically 140mV. V INPUT_HYST is the hysteresis at the input voltage The MIC2194 will be disabled when the input voltage drops back down to: V INPUT_OFF = V INPUT_ENABLE – VINPUT_HYST = (V THRESHOLD – VHYST) × + R RR 2 12 Either of 2 UVLO conditions will pull the soft start capacitor low: • When the V DD voltage drops below its undervoltage lockout level. • When the enable pin drops below the its enable threshold The internal bias circuit generates an internal 1.245V band- gap reference voltage for the voltage error amplifier and a 3V VDD voltage for the internal control circuitry. The VDD pin must be decoupled with a 1 µF ceramic capacitor. The capaci- tor must be placed close to the VDD pin. The other end of the capacitor must be connected directly to the ground plane. MOSFET Gate Drive The MIC2194 is designed to drive a high-side P-channel MOSFET. The source pin of the P-channel MOSFET is connected to the input of the power supply. It is turned on when OUTP pulls the gate of the MOSFET low. The advan- tage of using a P-channel MOSFET is that it does not require a bootstrap circuit to boost the gate voltage higher than the input, as would be required for an N-channel MOSFET. The VIN pin (pin 8) supplies the drive voltage to the gate drive pin, OUTP. MOSFET Selection The P-channel MOSFET must have a V GS threshold voltage equal to or lower than the input voltage when used in a buck converter topology. There is a limit to the maximum gate charge the MIC2194 will drive. MOSFETs with high gate charge will have slower turn-on and turn-off times. Slower transition times will cause higher power dissipation in the MOSFET due to higher switching transition losses. The MOSFET gate charge is also limited by power dissipation in the MIC2194. The power dissipated by the gate drive circuitry is calculated below: P GATE_DRIVE = QGATE × VIN × fS where: Q GATE is the total gate charge of both the N- and P- channel MOSFETs. f S is the switching frequency V IN is the gate drive voltage The graph in Figure 4 shows the total gate charge that can be driven by the MIC2194 over the input voltage range, for different values of switching frequency. 0 50 100 150 200 250 0 5 10 15 INPUT VOLTAGE (V) Max Gate Charge Figure 4. MIC2194 V IN vs Max. Gate Charge Oscillator The internal oscillator is free running and requires no external components. The maximum duty cycle for both frequencies is 100%. This is another advantage of using a P-channel MOSFET for the high-side drive; it can be continuously turned on. A frequency foldback mode is enabled if the voltage on the feedback pin (pin 2) is less than 0.3V. In frequency foldback, the oscillator frequency is reduced by approximately a factor of 4. Frequency foldback is used to limit the energy delivered to the output during a short circuit fault condition. Voltage Setting Components The MIC2194 requires two resistors to set the output voltage as shown in Figure 5. |
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