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K7A323600M Datasheet(PDF) 8 Page - Samsung semiconductor

Part # K7A323600M
Description  1Mx36 & 2Mx18 Synchronous SRAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K7A323600M Datasheet(HTML) 8 Page - Samsung semiconductor

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1Mx36 & 2Mx18 Synchronous SRAM
- 8 -
Rev 2.0
Nov. 2003
K7A321800M
K7A323600M
CAPACITANCE*(TA=25
°C, f=1MHz)
*Note : Sampled not 100% tested.
PARAMETER
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
Input Capacitance
CIN
VIN=0V
-
5
pF
Output Capacitance
COUT
VOUT=0V
-
7
pF
OPERATING CONDITIONS at 3.3V I/O(0
°C ≤ TA ≤ 70°C)
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
VDD
3.135
3.3
3.465
V
VDDQ
3.135
3.3
3.465
V
Ground
VSS
0
0
0
V
OPERATING CONDITIONS at 2.5V I/O(0
°C ≤ TA ≤ 70°C)
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
VDD
3.135
3.3
3.465
V
VDDQ
2.375
2.5
2.9
V
Ground
VSS
0
0
0
V
ABSOLUTE MAXIMUM RATINGS*
*Note : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
PARAMETER
SYMBOL
RATING
UNIT
Voltage on VDD Supply Relative to VSS
VDD
-0.3 to 4.6
V
Voltage on VDDQ Supply Relative to VSS
VDDQ
VDD
V
Voltage on Input Pin Relative to VSS
VIN
-0.3 to VDD+0.3
V
Voltage on I/O Pin Relative to VSS
VIO
-0.3 to VDDQ+0.3
V
Power Dissipation
PD
1.6
W
Storage Temperature
TSTG
-65 to 150
°C
Operating Temperature
Commercial
TOPR
0 to 70
°C
Industrial
TOPR
-40 to 85
°C
Storage Temperature Range Under Bias
TBIAS
-10 to 85
°C


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