R.A.P.990305-BEHRE

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR

USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

ITC1000

1000 WATT, 50V, Pulsed

Avionics 1030 MHz

GENERAL DESCRIPTION

The ITC1000 is a common base bipolar transistor. It is designed for pulsed

interrogator systems in the frequency band of 1030 MHz. The device has gold

thin-film metallization for proven high MTTF. The transistor includes input

returns for improved output rise time . Low thermal resistance package reduces

junction temperature which extends the life time of the product.

CASE OUTLINE

55SW, Style 1

Common Base

ABSOLUTE MAXIMUM RATINGS

Power Dissipation

Device Dissipation

°C (P

3400 W

Thermal Resistance

θ

Voltage and Current

Collector-Base Voltage

65V

Emitter-Base Voltage

3.5V

Collector Current

1

80A

Temperatures

Storage Temperature

-40 to +150

°C

Operating Junction Temperature

1

+200

°C

ELECTRICAL CHARACTERISTICS @ 25

°°°°C

SYMBOL

CHARACTERISTICS

TEST

CONDITIONS

MIN

TYP

MAX

UNITS

BVebo

2

Emitter-Base Breakdown(open)

Ie=50mA

3.5

V

BVces

Collector-Emitter Breakdown(shorted)

Ic=30mA

65

V

BVceo

2

Collector-Emitter Breakdown (open)

Ic=30mA

30

V

2

DC Current Gain

Ic=5A, Vce=5V

20

45

80

β

FUNCTIONAL CHARACTERISTICS @ 25

°°°°C

Common Base Power Gain

PW=1

µS, DF=1%

8.0

8.5

dB

η

c

Collector Efficiency

PW=1

µS, DF=1%

35

45

%

Rise Time

PW=1

µS, DF=1%

50

80

nS

VSWR

Output Load Mismatch

PW=1

µS, DF=1%

4:1

Ψ

Series Input Impedance (Circuit

source impedance @ test cond.)

PW=1

µS, DF=1%

1.0-j2.0

Ω

Series Output Impedance (Circuit

load impedance @ test cond.)

PW=1

µS, DF=1%

0.6-j2.1

Ω

Initial Issue May 1999