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CY7C1350F
Document #: 38-05305 Rev. *A
Page 9 of 16
ISB2
Automatic CE
Power-Down
Current—CMOS Inputs
VDD = Max, Device Deselected,
VIN ≤ 0.3V or VIN > VDDQ – 0.3V,
f = 0
All speeds
40
mA
ISB3
Automatic CE
Power-Down
Current—CMOS Inputs
VDD= Max, Device Deselected, or
VIN ≤ 0.3V or VIN > VDDQ – 0.3V
f = fMAX = 1/tCYC
4-ns cycle, 250 MHz
105
mA
4.4-ns cycle, 225 MHz
100
mA
5-ns cycle, 200 MHz
95
mA
6-ns cycle, 166 MHz
85
mA
7.5-ns cycle, 133 MHz
75
mA
10-ns cycle, 100 MHz
65
mA
ISB4
Automatic CE
Power-Down
Current—TTL Inputs
VDD = Max, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL, f = 0
All speeds
45
mA
AC Test Loads and Waveforms
Electrical Characteristics Over the Operating Range[10, 11](continued)
Parameter
Description
Test Conditions
Min.
Max.
Unit
OUTPUT
R = 317
Ω
R = 351
Ω
5pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
RL = 50Ω
Z0 = 50Ω
VL = 1.5V
3.3V
ALL INPUT PULSES
VDD
GND
90%
10%
90%
10%
≤ 1 ns
≤ 1 ns
(c)
OUTPUT
R = 1667
Ω
R =1538
Ω
5pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
RL = 50Ω
Z0 = 50Ω
VL = 1.25V
2.5V
ALL INPUT PULSES
VDD
GND
90%
10%
90%
10%
≤ 1 ns
≤ 1 ns
(c)
3.3V I/O Test Load
2.5V I/O Test Load
Thermal Resistance[12]
Parameter
Description
Test Conditions
TQFP
Package
BGA
Package
Units
ΘJA
Thermal Resistance
(Junction to Ambient)
Test conditions follow standard test methods
and procedures for measuring thermal imped-
ance, per EIA / JESD51.
41.83
47.63
°C/W
ΘJC
Thermal Resistance
(Junction to Case)
9.99
11.71
°C/W
Capacitance[12]
Parameter
Description
Test Conditions
TQFP
Package
BGA
Package
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VDD = 3.3V, VDDQ = 3.3V
5
5
pF
CI/O
Input/Output Capacitance
5
7
pF
Note:
12. Tested initially and after any design or process changes that may affect these parameters.
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