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BT168GW Datasheet(PDF) 2 Page - NXP Semiconductors |
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BT168GW Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 11 page 9397 750 13509 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 12 November 2004 2 of 11 Philips Semiconductors BT168GW Thyristors; logic level for RCD/GFI/LCCB applications 4. Limiting values [1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/ µs. Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDRM, VRRM repetitive peak off-state voltage [1] - 600 V IT(AV) average on-state current half sine wave; Tsp ≤ 112 °C; see Figure 1 - 0.63 A IT(RMS) RMS on-state current all conduction angles; see Figure 4 and 5 -1 A ITSM non-repetitive peak on-state current half sine wave; Tj =25 °C prior to surge; see Figure 2 and 3 t = 10 ms - 8 A t = 8.3 ms - 9 A I2tI2t for fusing t = 10 ms - 0.32 A2s dIT/dt repetitive rate of rise of on-state current after triggering ITM = 2 A; IG = 10 mA; dIG/dt = 100 mA/µs -50 A/ µs IGM peak gate current - 1 A VGM peak gate voltage - 5 V VRGM peak reverse gate voltage - 5 V PGM peak gate power - 2 W PG(AV) average gate power over any 20 ms period - 0.1 W Tstg storage temperature −40 +150 °C Tj junction temperature - 125 °C a = form factor = IT(RMS)/IT(AV). Fig 1. Total power dissipation as a function of average on-state current; maximum values IT(AV) (A) 0 0.8 0.6 0.4 0.2 001aab496 0.2 0.6 1 Ptot (W) 0 119 113 110 Tsp(max) ( °C) 125 4 0.4 0.8 116 122 a = 1.57 1.9 2.8 2.2 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 α |
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