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Product data sheet

Rev. 04 — 12 November 2004

2 of 11

Philips Semiconductors

BT168GW

Thyristors; logic level for RCD/GFI/LCCB applications

4.

Limiting values

[1]

Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.

The rate of rise of current should not exceed 15 A/

µs.

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

repetitive peak off-state voltage

[1] -

600

V

average on-state current

see Figure 1

-

0.63

A

RMS on-state current

all conduction angles;

see Figure 4 and 5

-1

A

non-repetitive peak on-state current

surge; see Figure 2 and 3

t = 10 ms

-

8

A

t = 8.3 ms

-

9

A

t = 10 ms

-

0.32

repetitive rate of rise of on-state

current after triggering

-50

A/

µs

peak gate current

-

1

A

peak gate voltage

-

5

V

peak reverse gate voltage

-

5

V

peak gate power

-

2

W

average gate power

over any 20 ms period

-

0.1

W

storage temperature

−40

+150

°C

junction temperature

-

125

°C

Fig 1.

Total power dissipation as a function of average on-state current; maximum values

0

0.8

0.6

0.4

0.2

001aab496

0.2

0.6

1

(W)

0

119

113

110

(

°C)

125

4

0.4

0.8

116

122

a =

1.57

1.9

2.8

2.2

conduction

angle

(degrees)

form

factor

a

30

60

90

120

180

4

2.8

2.2

1.9

1.57

α