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SI6954ADQ Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI6954ADQ Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Si6954ADQ Vishay Siliconix New Product www.siliconix.com S FaxBack 408-970-5600 2 Document Number: 71130 S-00013—Rev. A, 24-Jan-00 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V 100 nA Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V 1 mA Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 55_C 10 mA On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 20 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 3.4 A 0.044 0.053 W Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 2.9 A 0.062 0.075 W Forward Transconductancea gfs VDS = 15 V, ID = 3.4 A 10 S Diode Forward Voltagea VSD IS = 0.83 A, VGS = 0 V 0.8 1.2 V Dynamicb Total Gate Charge Qg V10 V V 10 V I 3 4 A 8 16 C Gate-Source Charge Qgs VDS = 10 V, VGS = 10 V, ID = 3.4 A 1.4 nC Gate-Drain Charge Qgd 1.2 Turn-On Delay Time td(on) V10 V R 10 W 12 20 Rise Time tr VDD = 10 V, RL = 10 W I 1 A V 10 V R 6 W 10 20 Turn-Off Delay Time td(off) DD , L ID ^ 1 A, VGEN = 10 V, RG = 6 W 23 45 ns Fall Time tf 8 15 Source-Drain Reverse Recovery Time trr IF = 0.83 A, di/dt = 100 A/ms 25 40 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 4 8 12 16 20 012345 0 4 8 12 16 20 012 34 VGS = 10 thru 5 V TC = 125_C –55 _C 4 V 25 _C Output Characteristics Transfer Characteristics VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) 3 V |
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