PBSS4140U datasheet(4/8 Pages) PHILIPS

Part #	PBSS4140U

Description	40 V low VCEsat NPN transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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4 / 8 page

2001 Jul 13

4

Philips Semiconductors

Product speciﬁcation

40 V low VCEsat NPN transistor

PBSS4140U

handbook, halfpage

0

1000

200

400

600

800

MLD660

10−1

1

(1)

10

IC (mA)

hFE

102

103

104

(3)

(2)

Fig.2

DC current gain as a function of collector

current; typical values.

VCE =5V.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

10

1

10−1

110

102

103

104

10−1

MLD656

IC (mA)

VBE

(V)

(1)

(3)

(2)

Fig.3

Base-emitter voltage as a function of

collector current; typical values.

VCE =5V.

(1) Tamb = −55 °C.

(2) Tamb =25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

103

102

10

1

MLD657

110

102

IC (mA)

VCEsat

(mV)

103

104

(3)

(2)

(1)

Fig.4

Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 10.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

MLD658

10

1

102

10−1

110

IC (mA)

RCEsat

(

Ω)

10−2

10−3

10−4

10−1

(3)

(1)

(2)

Fig.5

Equivalent on-resistance as a function of

collector current; typical values.

IC/IB = 10.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −55 °C.

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