NTP4302 datasheet(4/8 Pages) ONSEMI

Part #	NTP4302

Description	NTP4302, NTB4302

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Manufacturer	ONSEMI [ON Semiconductor]

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NTP4302, NTB4302

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4

1000

100

10

1

0

100

400

600

700

800

2

4

1

3

0

5

10

3000

0

Qg, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage versus Total Charge

1

1000

10

100

1

100

Figure 9. Resistive Switching Time Variations

versus Gate Resistance

RG, GATE RESISTANCE (Ω)

Figure 10. Diode Forward Voltage versus Current

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

TJ, STARTING JUNCTION TEMPERATURE (°C)

0.1

10

1

100

010

30

0.5

0.7

0.6

0.8

15

5

10

0

25

125

100

75

50

150

GATE−TO−SOURCE OR DRAIN−TO−SOURCE (VOLTS)

1000

2000

4000

6000

30

20

0.9

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

VGS

ID = 37 A

TJ = 25°C

VGS

VGS = 0 V

VDS = 0 V

TJ = 25°C

Crss

Ciss

Coss

Crss

Ciss

VGS = 20 V

SINGLE PULSE

TC = 25°C

VDD = 24 V

ID = 20 A

VGS = 10 V

VGS = 0 V

TJ = 25°C

ID = 17 A

10 ms

1 ms

100

µs

10

µs

dc

tf

td(off)

td(on)

tr

VDS

Q2

Q1

QT

1

10

5000

VDS

20

Mounted on 2

″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″

thick single sided) with one die operating, 10 s max.

200

300

500

30

24

18

12

6

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