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NTE22 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE22
Description  Silicon NPN Transistor AF PO, General Purpose Amp, Driver
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE22
Silicon NPN Transistor
AF PO, General Purpose Amp, Driver
Features:
D High Breakdown Voltage: VCEO = 80V
D Large IC Capacity: IC = 1A DC
D Good hFE Linearity
D Low Collector Saturation Voltage
Applications:
D Medium Power Output Stages
D High–Voltage Drivers
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse (Note 1)
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, PC
900mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, Tj
+135
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–55
° to +125°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. PW = 20ms, Duty Cycle = 1/2
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA
80
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 50µA
100
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 50µA
5
V
Collector Cutoff Current
ICBO
VCB = 80V
1
µA
Emitter Cutoff Current
IEBO
VEB = 4V
1
µA
DC Current Gain
hFE
VCE = 3V, IC = 50mA
120
270
Collector Saturation Voltage
VCE(sat)
IC = 500A, IB = 50mA
0.15
0.4
V
Transition Frequency
fT
VCE = 10V, IC = 50mA
100
MHz
Output Capacitance
Cob
VCB = 10V, f = 1MHz
20
pF




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