MP4006 datasheet(4/7 Pages) TOSHIBA

Part #	MP4006

Description	Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1)

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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4 / 7 page

MP4006

2002-11-20

4

(NPN transistor)

VCE – IB

Base-emitter voltage VBE (V)

Collector current IC (A)

VCE (sat) – IC

Collector current IC (A)

VBE (sat) – IC

Collector-emitter voltage VCE (V)

IC – VCE

IC – VBE

Collector current IC (A)

hFE – IC

Base current IB (mA)

Common emitter

Ta = 25°C

0

0.1

1

10

100

500

0.4

0.8

1.2

1.6

1.5

IC = 3 A

2.5

2.0

1

0.5

0.1

2.4

2.0

0

0.8

1.6

2.4

3.2

0.8

1.6

2.4

3.2

4.0

Common emitter

VCE = 2 V

25

−55

Ta = 100°C

0.1

0.3

0.5

1

3

0.5

1

3

5

Common emitter

IC/IB = 500

25

100

Ta = −55°C

100

0.03

25

−55

Ta = 100°C

0.1

0.3

1

3

10

300

500

1000

3000

5000

10000

Common emitter

VCE = 2 V

0.05

0.5

5

0.3

0.5

1

3

0.5

1

3

5

Common emitter

IC/IB = 500

25

100

Ta = −55°C

0.3

IB = 0.19 mA

0.21

0.23

0.5

2

0

Common emitter

Ta = 25°C

0.8

1.6

2.4

3.2

2

4

6

8

10

0.2

0

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MP4006 Datasheet(PDF) 4 Page - Toshiba Semiconductor

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