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M464S6454EN0 Datasheet(PDF) 11 Page - Samsung semiconductor

Part # M464S6454EN0
Description  SDRAM Unbuffered SODIMM
Download  18 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

M464S6454EN0 Datasheet(HTML) 11 Page - Samsung semiconductor

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128MB, 256MB, 512MB Unbuffered SODIMM
Rev. 1.5 May 2004
SDRAM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70
°C)
Parameter
Symbol
Test Condition
Version
Unit
Note
7A
Operating current
(One bank active)
ICC1
Burst length = 1
tRC
≥ tRC(min)
IO = 0 mA
460
mA
1
Precharge standby current
in power-down mode
ICC2P
CKE
≤ VIL(max), tCC = 10ns
16
mA
ICC2PS
CKE & CLK
≤ VIL(max), tCC =∞
16
Precharge standby current
in non power-down mode
ICC2N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
160
mA
ICC2NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC =∞
Input signals are stable
80
Active standby current in
power-down mode
ICC3P
CKE
≤ VIL(max), tCC = 10ns
50
mA
ICC3PS
CKE & CLK
≤ VIL(max), tCC =∞
50
Active standby current in
non power-down mode
(One bank active)
ICC3N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
200
mA
ICC3NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC =∞
Input signals are stable
200
mA
Operating current
(Burst mode)
ICC4
IO = 0 mA
Page burst
4Banks activated
tCCD = 2CLKs
620
mA
1
Refresh current
ICC5
tRC
≥ tRC(min)
820
mA
2
Self refresh current
ICC6
CKE
≤ 0.2V
C
24
mA
L
12
mA
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ)
Notes :
M464S3254ETS (32M x 64, 256MB Module)


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