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ESJC37-10F Datasheet(PDF) 1 Page - GETAI ELECTRONICS DEVICE CO., LTD |
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ESJC37-10F Datasheet(HTML) 1 Page - GETAI ELECTRONICS DEVICE CO., LTD |
1 / 2 page ESJC37-10F 350mA 10kV 80nS High Voltage Silicon Rectifier Diode ----------------------------------------------------------------------------------------------------------------------------- ------- GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2017-10 1 / 2 INTRODUCE: HVGT high voltage silicon rectifier diodes is made of high quality Silicon chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. FEATURES: 1. High reliability design. 2. Low VF. 3. High frequency. 4. Conform to RoHS and SGS. 5. Epoxy resin molded in vacuumHave anticorrosion in the surface. APPLICATIONS: 1. High voltage multiplier circuit 2. General purpose high voltage rectifier. 3. Rectification for X-ray generator high voltage power supply. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Terminal: welding axis. 3. Net weight: 0.65 grams (approx). SHAPE DISPLAY: SIZE: (Unit:mm) HVGT NAME: DO-415 MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage VRRM TA=25°C 10 kV Non-Repetitive Peak Renerse Voltage VRSM TA=25°C -- kV Average Forward Current Maximum IFAVM TA=40°C 350 mA TOIL=55°C -- mA Non-Repetitive Forward Surge Current IFSM TA=25°C; 50Hz Half-Sine Wave; 8.3mS 15 A Junction Temperature TJ 125 °C Allowable Operation Case Temperature Tc -40~+125 °C Storage Temperature TSTG -40~+125 °C ELECTRICAL CHARACTERISTICS: TA=25°C (Unless Otherwise Specified) Items Symbols Condition Data value Units Maximum Forward Voltage Drop VFM at 25°C; at IFAVM 25 V Maximum Reverse Current IR1 at 25°C; at VRRM 2.0 uA IR2 at 100°C; at VRRM 10 uA Maximum Reverse Recovery Time TRR at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR 80 nS Junction Capacitance CJ at 25°C; VR=0V; f=1MHz 15 pF |
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