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IRGIB6B60KD Datasheet(PDF) 1 Page - International Rectifier

Part No. IRGIB6B60KD
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
4/14/04
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
Benefits
www.irf.com
1
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
IRGIB6B60KD
E
G
n-channel
C
VCES = 600V
IC = 6.0A, TC=90°C
tsc > 10µs, TJ=175°C
VCE(on) typ. = 1.8V
TO-220
Full-Pak
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current
11
IC @ TC = 100°C
Continuous Collector Current
7.0
A
ICM
Pulse Collector Current (Ref.Fig.C.T.5)
22
ILM
Clamped Inductive Load current
c
22
IF @ TC = 25°C
Diode Continuous Forward Current
9.0
IF @ TC = 100°C
Diode Continuous Forward Current
6.0
IFM
Diode Maximum Forward Current
18
VISOL
RMS Isolation Voltage, Terminal to Case, t = 1 min
2500
V
VGE
Gate-to-Emitter Voltage
±20
PD @ TC = 25°C
Maximum Power Dissipation
38
W
PD @ TC = 100°C Maximum Power Dissipation
19
TJ
Operating Junction and
-55 to +175
TSTG
Storage Temperature Range
°C
Soldering Temperature for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf.in (1.1N.m)
Thermal / Mechanical Characteristics
Parameter
Min.
Typ.
Max.
Units
RθJC
Junction-to-Case- IGBT
–––
–––
3.9
RθJC
Junction-to-Case- Diode
–––
–––
6.0
°C/W
RθCS
Case-to-Sink, flat, greased surface
–––
0.50
–––
RθJA
Junction-to-Ambient, typical socket mount
–––
–––
62
Wt
Weight
–––
2.0
–––
g
PD-94427D




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