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IRGIB6B60KD Datasheet(PDF) 5 Page - International Rectifier

Part No. IRGIB6B60KD
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRGIB6B60KD
www.irf.com
5
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
0
5
10
15
20
VGE (V)
0
5
10
15
20
25
30
35
40
TJ = 25°C
TJ = 150°C
TJ = 150°C
TJ = 25°C
510
15
20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
ICE = 3.0A
ICE = 5.0A
ICE = 10A
510
15
20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
ICE = 3.0A
ICE = 5.0A
ICE = 10A
510
15
20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
ICE = 3.0A
ICE = 5.0A
ICE = 10A




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