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IRGIB6B60KD Datasheet(PDF) 2 Page - International Rectifier

Part No. IRGIB6B60KD
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRGIB6B60KD
2
www.irf.com
 Vcc =80% (VCES), VGE = 20V, L =100µH, RG = 50Ω.
‚ Energy losses include "tail" and diode reverse recovery.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
Conditions
Ref.Fig.
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
V
VGE = 0V, IC = 500µA
∆V
(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
—0.30
V/°C VGE = 0V, IC = 1mA (25°C-150°C)
VCE(on)
Collector-to-Emitter Voltage
1.50
1.80
2.20
V
IC = 5A, VGE = 15V, TJ = 25°C
5,6,7
—2.20
2.50
IC = 5A, VGE = 15V, TJ = 150°C
—2.30
2.60
IC = 5A, VGE = 15V, TJ = 175°C
9,10,11
VGE(th)
Gate Threshold Voltage
3.5
4.5
5.5
V
VCE = VGE, IC = 250µA
9,10,11
∆V
GE(th)/∆TJ
Threshold Voltage temp. coefficient
-10
mV/°C VCE = VGE, IC = 1mA (25°C-150°C)
12
gfe
Forward Transconductance
3.0
S
VCE = 50V, IC = 5.0A, PW = 80µs
ICES
Zero Gate Voltage Collector Current
1.0
150
µA
VGE = 0V, VCE = 600V
—200
500
VGE = 0V, VCE = 600V, TJ = 150°C
720
1100
VGE = 0V, VCE = 600V, TJ = 175°C
VFM
Diode Forward Voltage Drop
1.25
1.45
V
IF = 5.0A, VGE = 0V
8
—1.20
1.40
IF = 5.0A, VGE = 0V, TJ = 150°C
—1.15
1.35
IF = 5.0A, VGE = 0V, TJ = 175°C
IGES
Gate-to-Emitter Leakage Current
±100
nA
VGE = ±20V, VCE = 0V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
Conditions
Ref.Fig.
Qg
Total Gate Charge (turn-on)
18.2
27.3
IC = 5.0A
23
Qge
Gate-to-Emitter Charge (turn-on)
1.9
2.85
nC
VCC = 400V
CT1
Qgc
Gate-to-Collector Charge (turn-on)
9.2
13.8
VGE = 15V
Eon
Turn-On Switching Loss
110
210
IC = 5.0A, VCC = 400V
CT4
Eoff
Turn-Off Switching Loss
135
245
µJ
VGE = 15V, RG = 100Ω, L = 1.4mH
Etot
Total Switching Loss
245
455
Ls= 150nH, TJ = 25°C
d
td(on)
Turn-On delay time
25
34
IC = 5.0A, VCC = 400V
tr
Rise time
17
26
ns
VGE = 15V, RG = 100Ω, L = 1.4mH
CT4
td(off)
Turn-Off delay time
215
230
Ls= 150nH, TJ = 25°C
tf
Fall time
13.2
22
Eon
Turn-On Switching Loss
150
260
IC = 5.0A, VCC = 400V
CT4
Eoff
Turn-Off Switching Loss
190
300
µJ
VGE = 15V, RG = 100Ω, L = 1.4mH
13,15
Etot
Total Switching Loss
340
560
Ls= 150nH, TJ = 150°C
d
WF1,WF2
td(on)
Turn-On delay time
28
37
IC = 5.0A, VCC = 400V
14,16
tr
Rise time
17
26
ns
VGE = 15V, RG = 100Ω, L = 1.4mH
CT4
td(off)
Turn-Off delay time
240
255
Ls= 150nH, TJ = 150°C
WF1
tf
Fall time
18
27
WF2
LE
Internal Emitter Inductance
7.5
nH
Measured 5 mm from package
Cies
Input Capacitance
290
435
VGE = 0V
Coes
Output Capacitance
34
51
pF
VCC = 30V
22
Cres
Reverse Transfer Capacitance
10
15
f = 1.0MHz
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
TJ = 150°C, IC = 18A, Vp = 600V
4
VCC=500V,VGE = +15V to 0V,RG = 100Ω
CT2
SCSOA
Short Circuit Safe Operating Area
10
µs
TJ = 150°C, Vp = 600V, RG = 100Ω
CT3
VCC=360V,VGE = +15V to 0V
WF4
ISC (PEAK)
Peak Short Circuit Collector Current
50
A
WF4
Erec
Reverse Recovery Energy of the Diode
90
175
µJ
TJ = 150°C
17,18,19
trr
Diode Reverse Recovery Time
70
91
ns
VCC = 400V, IF = 5.0A, L = 1.4mH
20,21
Irr
Peak Reverse Recovery Current
10
13
A
VGE = 15V, RG = 100Ω, Ls= 150nH
CT4,WF3
Qrr
Diode Reverse Recovery Charge
350
455
nC
di/dt = 400A/µs




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