CR02AM datasheet(2/5 Pages) MITSUBISHI

Part #	CR02AM

Description	LOW POWER USE PLANAR PASSIVATION TYPE

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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2 / 5 page

Sep.2000

3V

DC

IGS

IGT

6V

DC

60

Ω

VGT

2

1

TUT

1k

Ω

RGK

A3

A2

V1

A1

SWITCH 1 : IGT measurement

SWITCH 2 : VGT measurement

(Inner resistance of voltage meter is about 1k

Ω)

V3. IGT, VGT measurement circuit.

SWITCH

MITSUBISHI SEMICONDUCTOR

〈THYRISTOR〉

CR02AM

LOW POWER USE

PLANAR PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS

Test conditions

Tj=125

°C, VRRM applied

Tj=125

°C, VDRM applied, RGK=1kΩ

Ta=25

°C, ITM=0.6A, instantaneous value

Ta=25

°C, VD=6V, IT=0.1A V3

Tj=125

°C, VD=1/2VDRM, RGK=1kΩ

Tj=25

°C, VD=6V, IT=0.1A V3

Tj=25

°C, VD=12V, RGK=1kΩ

Junction to ambient

Unit

mA

V

µA

mA

°C/W

Typ.

—

Symbol

IRRM

IDRM

VTM

VGT

VGD

IGT

IH

Rth (j-a)

Parameter

Repetitive peak reverse current

Repetitive peak off-state current

On-state voltage

Gate trigger voltage

Gate non-trigger voltage

Gate trigger current

Holding current

Thermal resistance

V2. If special values of IGT are required, choose at least two items from those listed in the table below. (Example: AB, BC)

B

20 ~ 50

C

40 ~ 100

Item

IGT (

µA)

A

1 ~ 30

The above values do not include the current flowing through the 1k

Ω resistance between the gate and cathode.

Limits

Min.

—

0.2

1

—

Max.

0.1

1.6

0.8

—

100

V2

3

180

PERFORMANCE CURVES

100

23

5 7 101

4

2

23

5 7 102

44

6

8

10

3

1

5

7

9

0

2.6

1.0

1.4

1.8

2.2

1.2

1.6

2.0

2.4

101

7

5

3

2

100

7

5

3

2

10–1

7

5

3

2

10–2

Ta = 25

°C

MAXIMUM ON-STATE CHARACTERISTICS

ON-STATE VOLTAGE (V)

RATED SURGE ON-STATE CURRENT

CONDUCTION TIME

(CYCLES AT 60Hz)

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