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BD5351 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers

Part # BD5351
Description  VOLTAGE DETECTOR IC
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Manufacturer  ETC [List of Unclassifed Manufacturers]
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BD5351 Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers

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Absolute Maximum Ratings (Ta=25˚C)
Output voltage Nch open drain output
CMOS output
Power dissipation:SSOP5(SMP5C2)
Input voltage of CT
Power dissipation:VSOF5(EMP5)
Operating temperature range
Parameter
Symbol
Unit
VOUT
VCT
Pd
Pd
Topr
V
V
mW
mW
Storage temperature range
Tstg
Limits
– 40 ~ + 85
– 55 ~ + 125
540
210
GND – 0.3 ~ + 10
GND – 0.3 ~ VDD + 0.3
GND – 0.3 ~ VDD + 0.3
˚C
˚C
Power supply voltage
VDD – GND
– 0.3 ~ + 10
V
*1
*2
Characteristic diagram and Measurement circuit
0.90
0.80
0.85
0.90
2.70
0.80
2.40
VDET=2.3~3.1V
0.85
2.55
VDET=3.2~4.2V
VDET=4.3~5.2V
0.95
2.85
VDET=5.3~6.0V
VDET=3.2~4.2V
VDET=4.3~5.2V
VDET=5.3~6.0V
0.75
VDET=2.3~3.1V
2.25
2.40
2.55
2.70
0.1
µA
µA
µA
Icc1
Icc2
Ileak
Circuit current when ON
Circuit current when OFF
Output leak current
VsX0.03 VsX0.05 VsX0.08
%
∆VDET
Hysteresis voltage
RL=470k
Ω, VDD=L
H
L
*1
*1
*1
*1
Detection voltage
temperature coefficient
VDET/
∆T
±100
±360
ppm/ ˚C
*1 This value is guranteed at Ta=25˚C.
VDD=VDET–0.2V
VDD=VDET+2V
0.95
V
VOPL
Min. operating voltage
RL=470k
Ω, VOL
≥0.4V
VDD=VDS=10V
0.7
1.4
0.9
1.8
1.1
2.2
mA
IOH
"H" output current
VDS=0.5V, VDD=4.8V VDET=2.3~4.2V
VDS=0.5V, VDD=6.0V VDET=4.3~5.2V
VDS=0.5V, VDD=8.0V VDET=5.3~6.0V
Electrical characteristics (Unless otherwise noted; Ta=-25~85˚C)
2.0
5.0
mA
IOL
"L" output current
0.4
1.2
VDS=0.5V, VDD=1.2V
VDS=0.5V, VDD=2.4V (VDET
≥2.7V)
Symbol
Min.
Max.
Unit
Conditions
Typ.
Parameter
*1 Derating: 5.4mW/˚C for operation above Ta=25˚C.(Mounted on a 70.0mmX70.0mmX16mm glass epoxy PCB.)
*2 Derating: 2.1mW/˚C for operation above Ta=25˚C.(Mounted on a 70.0mmX70.0mmX16mm glass epoxy PCB.)
*2 TPLH : VDD=(VDET typ.–0.5V)
(VDET typ.+0.5V).
Note) RL is not necessary for CMOS output type.
Note) Please refer to the detection voltage of Line-up table.
Output delay time "L
H"
Output delay time "H
L"
VDET=2.3~2.6V
VDET=2.7~4.2V
VDET=4.3~5.2V
VDET=5.3~6.0V
VDD=VDETX1.1
5.5
9
12.5
M
RCT
Output delay resistance
VDD=VDETX1.1
15
40
µA
ICT
CT pin output current
VCT=0.1V,VDD=0.95V
VCT=0.5V,VDD=1.5V
150
240
VDDX0.35 VDDX0.5 VDDX0.6
VDDX0.4 VDDX0.5 VDDX0.6
VDDX0.3 VDDX0.45 VDDX0.6
V
VCTH
CT pin Threshold voltage
VDDX0.3 VDDX0.4 VDDX0.6
5V
VDET 0.5V
RL=100k
100pF
VDD
VOUT
CT
GND
100pF
5V
VDET 0.5V
RL=100k
VDD
VOUT
GND
CT
CT Capacitance [
µF]
10
1
0.1
0.01
0.001
0.0001
0.00001
0.000001
1
0.1
0.01
0.001
0.0001
[BD5242G/FVE]
CT Capacitance[
µF]
40.00
35.00
30.00
25.00
20.00
15.00
10.00
5.00
0.00
0.0001
0.0010
0.0100
0.1000
1.0000
[BD5242G/FVE]


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