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BD5351 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers |
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BD5351 Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers |
2 / 4 page Absolute Maximum Ratings (Ta=25˚C) Output voltage Nch open drain output CMOS output Power dissipation:SSOP5(SMP5C2) Input voltage of CT Power dissipation:VSOF5(EMP5) Operating temperature range Parameter Symbol Unit VOUT VCT Pd Pd Topr V V mW mW Storage temperature range Tstg Limits – 40 ~ + 85 – 55 ~ + 125 540 210 GND – 0.3 ~ + 10 GND – 0.3 ~ VDD + 0.3 GND – 0.3 ~ VDD + 0.3 ˚C ˚C Power supply voltage VDD – GND – 0.3 ~ + 10 V *1 *2 Characteristic diagram and Measurement circuit — — — — — 0.90 0.80 0.85 0.90 — 2.70 — 0.80 2.40 VDET=2.3~3.1V — 0.85 2.55 VDET=3.2~4.2V VDET=4.3~5.2V — 0.95 2.85 VDET=5.3~6.0V VDET=3.2~4.2V VDET=4.3~5.2V VDET=5.3~6.0V — 0.75 VDET=2.3~3.1V 2.25 2.40 2.55 2.70 0.1 µA µA µA Icc1 Icc2 Ileak Circuit current when ON Circuit current when OFF Output leak current VsX0.03 VsX0.05 VsX0.08 % ∆VDET Hysteresis voltage RL=470k Ω, VDD=L H L *1 *1 *1 *1 Detection voltage temperature coefficient VDET/ ∆T — ±100 ±360 ppm/ ˚C *1 This value is guranteed at Ta=25˚C. VDD=VDET–0.2V VDD=VDET+2V 0.95 — — V VOPL Min. operating voltage RL=470k Ω, VOL ≥0.4V VDD=VDS=10V 0.7 1.4 — 0.9 1.8 — 1.1 2.2 — mA IOH "H" output current VDS=0.5V, VDD=4.8V VDET=2.3~4.2V VDS=0.5V, VDD=6.0V VDET=4.3~5.2V VDS=0.5V, VDD=8.0V VDET=5.3~6.0V Electrical characteristics (Unless otherwise noted; Ta=-25~85˚C) 2.0 5.0 — mA IOL "L" output current 0.4 1.2 — VDS=0.5V, VDD=1.2V VDS=0.5V, VDD=2.4V (VDET ≥2.7V) Symbol Min. Max. Unit Conditions Typ. Parameter *1 Derating: 5.4mW/˚C for operation above Ta=25˚C.(Mounted on a 70.0mmX70.0mmX16mm glass epoxy PCB.) *2 Derating: 2.1mW/˚C for operation above Ta=25˚C.(Mounted on a 70.0mmX70.0mmX16mm glass epoxy PCB.) *2 TPLH : VDD=(VDET typ.–0.5V) (VDET typ.+0.5V). Note) RL is not necessary for CMOS output type. Note) Please refer to the detection voltage of Line-up table. Output delay time "L H" Output delay time "H L" VDET=2.3~2.6V VDET=2.7~4.2V VDET=4.3~5.2V VDET=5.3~6.0V VDD=VDETX1.1 5.5 9 12.5 M Ω RCT Output delay resistance VDD=VDETX1.1 15 40 — µA ICT CT pin output current VCT=0.1V,VDD=0.95V VCT=0.5V,VDD=1.5V 150 240 — VDDX0.35 VDDX0.5 VDDX0.6 VDDX0.4 VDDX0.5 VDDX0.6 VDDX0.3 VDDX0.45 VDDX0.6 V VCTH CT pin Threshold voltage VDDX0.3 VDDX0.4 VDDX0.6 5V VDET 0.5V RL=100k Ω 100pF VDD VOUT CT GND 100pF 5V VDET 0.5V RL=100k Ω VDD VOUT GND CT CT Capacitance [ µF] 10 1 0.1 0.01 0.001 0.0001 0.00001 0.000001 1 0.1 0.01 0.001 0.0001 [BD5242G/FVE] CT Capacitance[ µF] 40.00 35.00 30.00 25.00 20.00 15.00 10.00 5.00 0.00 0.0001 0.0010 0.0100 0.1000 1.0000 [BD5242G/FVE] |
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