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SP3282EBCA Datasheet(PDF) 11 Page - Sipex Corporation |
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SP3282EBCA Datasheet(HTML) 11 Page - Sipex Corporation |
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11 / 15 page  11 Date: 02/24/05 SP3282EB Intelligent +2.35V to +5.5V RS-232 Transceivers © Copyright 2005 Sipex Corporation external transmitters are disabled. Otherwise, R XINACT will be at a logic LOW. This circuit is duplicated for each of the other receivers. The second stage of the AUTO ON-LINE® cir- cuitry, shown in Figure 16, processes all the receiver's R XINACT signals with an accumulated delay that disables the device to a 1 µA supply current. The STATUS pin goes to a logic LOW when the cable is disconnected, or when the exter- nal transmitters are disabled. When the drivers or internal charge pump are disabled, the supply current is reduced to 1 µA. This can commonly occur in hand-held or portable applications where the RS-232 cable is disconnected or the RS-232 drivers of the connected peripheral are turned off. The AUTO ON-LINE® mode can be disabled by the SHUTDOWN pin. If this pin is a logic LOW, the AUTO ON-LINE® function will not operate regardless of the logic state of the ONLINE pin. Table 3 summarizes the logic of the AUTO ON- LINE® operating modes and the truth table logic of the driver and receiver outputs. When the SP3282EB device is shut down, the charge pump is turned off. V+ charge pump output decays to V CC, the V- output decays to GND. The decay time will depend on the size of capacitors used for the charge pump. Once in shutdown, the time required to exit the shut down state and have valid V+ and V- levels is typically 200 µs. For easy programming, the STATUS pin can be used to indicate DTR or a Ring Indicator signal. Tying ONLINE and SHUTDOWN together will bypass the AUTO ON-LINE® circuitry so this connection acts like a shutdown input pin. ESD TOLERANCE The SP3282EB device incorporates ruggedized ESD cells on all driver output and receiver input pins. The ESD structure is improved over our previous family for more rugged applications and environments sensitive to electro-static discharges and associated transients. The improved ESD tol- erance is at least +15kV without damage nor latch- up. There are different methods of ESD testing ap- plied: a) MIL-STD-883, Method 3015.7 b) IEC1000-4-2 Air-Discharge c) IEC1000-4-2 Direct Contact The Human Body Model has been the generally accepted ESD testing method for semiconductors. This method is also specified in MIL-STD-883, Method 3015.7 for ESD testing. The premise of this ESD test is to simulate the human body’s potential to store electro-static energy and discharge it to an integrated circuit. The simulation is performed by using a test model as shown in Figure 18. This method will test the IC’s capability to withstand an ESD transient during normal handling such as in manufacturing areas where the ICs tend to be handled frequently. TheIEC-1000-4-2,formerlyIEC801-2,isgenerally used for testing ESD on equipment and systems. For system manufacturers, they must guarantee a certain amount of ESD protection since the system itself is exposed to the outside environment and human presence. The premise with IEC1000-4-2 is that the system is required to withstand an amount of static electricity when ESD is applied to points and surfaces of the equipment that are accessible to personnel during normal usage. The transceiver IC receives most of the ESD current when the ESD source is applied to the connector pins. The test circuit for IEC1000- 4-2 is shown on Figure 19. There are two methods within IEC1000-4-2, the Air Discharge method and the Contact Discharge method. With the Air Discharge Method, an ESD voltage is applied to the equipment under test (EUT) through air. This simulates an electrically charged person ready to connect a cable onto the rear of the system only to find an unpleasant zap just before the person touches the back panel. The high energy potential on the person discharges through an arcing path to the rear panel of the system before he or she even touches the system. This energy, whether discharged directly or through air, is predominantly a function of the discharge current rather than the discharge voltage. Variables with an air discharge such as approach speed of the object carrying the ESD potential to the system and humidity will tend to change the discharge current. For example, the rise time of the discharge current varies with the approach speed. The Contact Discharge Method applies the ESD current directly to the EUT. This method was |
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