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BCW60D Datasheet(PDF) 2 Page - Vishay Siliconix |
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BCW60D Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 3 page  BCW61 Series Vishay Semiconductors formerly General Semiconductor www.vishay.com Document Number 88171 2 09-May-02 Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Symbol Min. TYP. Max. Unit DC Current Gain at –VCE = 5 V, –IC = 10 µA BCW61A hFE –––– at –VCE = 5 V, –IC = 10 µA BCW61B hFE 30 ––– at –VCE = 5 V, –IC = 10 µA BCW61C hFE 40 ––– at –VCE = 5 V, –IC = 10 µA BCW61D hFE 100 ––– at –VCE = 5 V, –IC = 2 mA BCW61A hFE 120 – 220 – at –VCE = 5 V, –IC = 2 mA BCW61B hFE 180 – 310 – at –VCE = 5 V, –IC = 2 mA BCW61C hFE 250 – 460 – at –VCE = 5 V, –IC = 2 mA BCW61D hFE 380 – 630 – at –VCE = 1 V, –IC = 50 mA BCW61A hFE 60 ––– at –VCE = 1 V, –IC = 50 mA BCW61B hFE 80 ––– at –VCE = 1 V, –IC = 50 mA BCW61C hFE 100 ––– at –VCE = 1 V, –IC = 50 mA BCW61D hFE 110 ––– Collector-Emitter Saturation Voltage at –IC = 10 mA, –IB = 0.25 mA –VCEsat 60 – 250 mV at –IC = 50 mA, –IB = 1.25 mA –VCEsat 120 – 550 mV Base-Emitter Saturation Voltage at –IC = 10 mA, –IB = 0.25 mA –VBEsat 600 – 850 mV at –IC = 50 mA, –IB = 1.25 mA –VBEsat 680 – 1050 mV Base-Emitter Voltage at –VCE = 5 V, –IC = 2 mA –VBE 600 650 750 mV at –VCE = 5 V, –IC = 10 µA –VBE – 550 – mV at –VCE = 1 V, –IC = 50 mA –VBE – 720 – mV Collector-Emiter Cut-off Current at –VCE = 32 V, VEB=0 –ICES –– 20 nA at –VCE = 32 V, VEB=0, TA = 150 °C –– 20 µA Emitter-Base Cut-off Current at –VEB = 4 V, IC=0 –IEBO –– 20 nA Gain-Bandwidth Product at –VCE = 5 V, –IC = 10 mA, f = 100 MHz fT 100 –– MHz Collector-Base Capacitance at –VCB = 10 V, f = 1 MHZ, IE=0 CCBO – 4.5 – pF Emitter-Base Capacitance at –VEB = 0.5 V, f = 1 MHZ, IC=0 CEBO – 11 – pF Noise Figure at –VCE = 5 V, –IC = 200 µA, RS = 2 kΩ, f = 100 kHZ, B = 200Hz F – 26 dB Small Signal Current Gain BCW60A – 200 at –VCE = 5V, –IC = 2 mA, f = 1.0 kHZ BCW60B – 260 BCW60C hfe – 330 BCW60D – 520 Turn-on Time at RL = 990 Ω (see fig. 1) – VCC = 10V, –Ic = 10mA, –IB(on) = IB(off) = 1mA ton – 85 150 ns Turn-off Time at RL = 990 Ω (see fig. 1) – VCC = 10V, –Ic = 10mA, –IB(on) = IB(off) = 1mA toff – 480 800 ns |
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