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© 2001 IXYS All rights reserved

IXYS Semiconductor GmbH

Edisonstr. 15,

D-68623 Lampertheim

Phone: +49-6206-503-0, Fax: +49-6206-503627

IXYS Corporation

3540 Bassett Street, Santa Clara CA 95054

Phone: (408) 982-0700, Fax: 408-496-0670

Advanced Technical Information

Rectifier Module for

Three Phase Power Factor Correction

IXYS reserves the right to change limits, test conditions and dimensions.

VUI 30-12 N1

Typical Rectified Mains Power

P

15 kW

at V

Features

• NPT IGBT with low saturation voltage

• fast recovery epitaxial diodes (FRED)

• module package:

- high level of integration

- solder terminals for PCB mounting

- isolated DCB ceramic base plate

- large creepage and strike distances

Applications

Three phase rectifier with power factor

correction, set up as follows:

• input from three phase mains

- wide range of input voltage

- mains currents approximately sinusoidal

in phase with mains voltage

- topology permits to control overcurrent

such as in case of input voltage peaks

• output

- direct current link

- buck type converter - reduced output

voltage

- possibility to supply boost converter,

inverter etc.

• required components

- one power semiconductor module per

phase

- one inductor and one capacitor per

phase on mains side

- output inductor, depending on supplied

circuit

Transistor T

Symbol

Conditions

Maximum Ratings

V

CES

T

1200

V

V

GES

± 20

V

I

C25

T

25°C

95

A

I

C80

T

80°C

65

A

I

CM

V

100

A

V

CEK

RBSOA; L = 100 µH

V

CES

t

SC

V

10

µs

(SCSOA)

non-repetitive

Symbol

Conditions

Characteristic Values

(T

min.

typ.

max.

V

CE(sat)

I

25°C

1.7

2.0

V

T

1.9

V

V

GE(th)

I

4.5

6.5

V

I

CES

V

25°C

1.6

mA

T

1.8

mA

I

GES

V

400

nA

t

d(on)

100

ns

t

r

70

ns

t

d(off)

500

ns

t

f

70

ns

E

on

3.0

mJ

E

off

2.2

mJ

C

ies

V

3.3

nF

Q

Gon

V

240

nC

R

thJC

0.3 K/W

R

thJH

with heatsink transfer paste

0.6

K/W

Inductive load, T

V

V

±15 V; R