SUM65N20-30 datasheet(4/5 Pages) VISHAY

Part #	SUM65N20-30

Description	N-Channel 200-V (D-S) 175C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SUM65N20-30

Vishay Siliconix

New Product

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Document Number: 71702

S-04920—Rev. A, 15-Oct-01

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Drain Source Breakdown vs.

Junction Temperature

Avalanche Current vs. Time

0.0

0.5

1.0

1.5

2.0

2.5

3.0

–50

–25

0

25

50

75

100

125

150

175

On-Resistance vs. Junction Temperature

Source-Drain Diode Forward Voltage

TJ – Junction Temperature (_C)

VSD – Source-to-Drain Voltage (V)

100

10

1

0.3

0.6

0.9

1.2

VGS = 10 V

ID = 30 A

TJ = 25_C

TJ = 150_C

0

180

190

200

210

220

230

240

–50

–25

0

25

50

75

100

125

150

175

TJ – Junction Temperature (_C)

tin (Sec)

1000

10

0.00001

0.001

0.1

1

0.1

0.01

IAV (A) @ TA = 150_C

ID = 1.0 mA

100

1

0.0001

IAV (A) @ TA = 25_C

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