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HY62UF16201A-I Datasheet(PDF) 8 Page - Hynix Semiconductor |
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HY62UF16201A-I Datasheet(HTML) 8 Page - Hynix Semiconductor |
8 / 11 page HY62UF16201A Series Rev.08 / Mar. 2002 7 DATA RETENTION ELECTRIC CHARACTERISTIC TA=0 °C to 70°C/ -40°C to 85°C (I),unless otherwise specified Symbol Parameter Test Condition Min. Typ. Max. Unit VDR Vcc for Data Retention /CS > Vcc - 0.2V or /UB = /LB > Vcc-0.2V, 1.2 - 3.3 V VIN > Vcc - 0.2V or VIN < Vss + 0.2V ICCDR Data Retention Current Vcc=1.5V, /CS > Vcc - 0.2V or /UB = /LB > Vcc-0.2V, LL - - 10 uA VIN > Vcc - 0.2V or SL - - 2 uA VIN < Vss + 0.2V tCDR Chip Deselect to Data Retention Time See Data Retention Timing Diagram 0 - - ns tR Operating Recovery Time tRC(3) - - ns Notes: 1. Typical values are under the condition of TA = 25 °C. 2. Typical Values are sampled and not 100% tested 3. tRC is read cycle time. DATA RETENTION TIMING DIAGRAM CS VDR CS > VCC-0.2V tCDR tR VSS VCC 2.7V DATA RETENTION MODE or /UB &/LB or /UB = /LB > Vcc – 0.2V |
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