Rev. 1.1 June. 2005

DDR SDRAM

DDR SDRAM 512Mb C-die (x4, x8, x16)

32M x 4Bit x 4 Banks / 16M x 8Bit x 4 Banks / 8M x 16Bit x 4 Banks Double Data Rate SDRAM

The K4H510438C / K4H510838C / K4H511638C is 536,870,912 bits of double data rate synchronous DRAM organized as 4x

33,554,432 / 4x 16,777,216 / 4x 8,388,608 words by 4/8/16bits, fabricated with SAMSUNG

′s high performance CMOS technology. Syn-

chronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin. I/O transactions are possible on both

edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful

for a variety of high performance memory system applications.

Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommend operation condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

Parameter

Symbol

Value

Unit

-0.5 ~ 3.6

V

-1.0 ~ 3.6

V

Storage temperature

-55 ~ +150

°C

Power dissipation

1.5

W

Short circuit current

50

mA

°C)

Note :

1. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of same. Peak-to peak noise on VREF may

not exceed +/-2% of the dc value.

ations in the DC level of VREF

3. VID is the magnitude of the difference between the input level on CK and the input level on CK.

4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temperature and voltage range,

for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum difference between pullup and pulldown drivers

due to process variation. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7 for device drain to

source voltages from 0.1 to 1.0.

Parameter

Symbol

Min

Max

Unit

Note

2.3

2.7

2.5

2.7

2.3

2.7

V

2.5

2.7

I/O Reference voltage

0.49*VDDQ

0.51*VDDQ

V

1

I/O Termination voltage(system)

V2

Input logic high voltage

V

Input logic low voltage

-0.3

V

Input Voltage Level, CK and CK inputs

-0.3

V

Input Differential Voltage, CK and CK inputs

0.36

V

3

V-I Matching: Pullup to Pulldown Current Ratio

VI(Ratio)

0.71

1.4

-

4

Input leakage current

-2

2

uA

Output leakage current

-5

5

uA

-16.8

mA

16.8

mA

-9

mA

9mA

9.0 General Description

10.0 Absolute Maximum Rating

11.0 DC Operating Conditions