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K4H510838C-ULB0 Datasheet(PDF) 10 Page - Samsung semiconductor |
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K4H510838C-ULB0 Datasheet(HTML) 10 Page - Samsung semiconductor |
10 / 24 page Rev. 1.1 June. 2005 DDR SDRAM DDR SDRAM 512Mb C-die (x4, x8, x16) 32M x 4Bit x 4 Banks / 16M x 8Bit x 4 Banks / 8M x 16Bit x 4 Banks Double Data Rate SDRAM The K4H510438C / K4H510838C / K4H511638C is 536,870,912 bits of double data rate synchronous DRAM organized as 4x 33,554,432 / 4x 16,777,216 / 4x 8,388,608 words by 4/8/16bits, fabricated with SAMSUNG ′s high performance CMOS technology. Syn- chronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications. Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommend operation condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. Parameter Symbol Value Unit Voltage on any pin relative to VSS VIN, VOUT -0.5 ~ 3.6 V Voltage on VDD & VDDQ supply relative to VSS VDD, VDDQ -1.0 ~ 3.6 V Storage temperature TSTG -55 ~ +150 °C Power dissipation PD 1.5 W Short circuit current IOS 50 mA Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 70 °C) Note : 1. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of same. Peak-to peak noise on VREF may not exceed +/-2% of the dc value. 2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and must track vari- ations in the DC level of VREF 3. VID is the magnitude of the difference between the input level on CK and the input level on CK. 4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temperature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7 for device drain to source voltages from 0.1 to 1.0. Parameter Symbol Min Max Unit Note Supply voltage(for device with a nominal VDD of 2.5V for DDR266/333) VDD 2.3 2.7 Supply voltage(for device with a nominal VDD of 2.6V for DDR400) VDD 2.5 2.7 I/O Supply voltage(for device with a nominal VDD of 2.5V for DDR266/333) VDDQ 2.3 2.7 V I/O Supply voltage(for device with a nominal VDD of 2.5V for DDR400) VDDQ 2.5 2.7 I/O Reference voltage VREF 0.49*VDDQ 0.51*VDDQ V 1 I/O Termination voltage(system) VTT VREF-0.04 VREF+0.04 V2 Input logic high voltage VIH(DC) VREF+0.15 VDDQ+0.3 V Input logic low voltage VIL(DC) -0.3 VREF-0.15 V Input Voltage Level, CK and CK inputs VIN(DC) -0.3 VDDQ+0.3 V Input Differential Voltage, CK and CK inputs VID(DC) 0.36 VDDQ+0.6 V 3 V-I Matching: Pullup to Pulldown Current Ratio VI(Ratio) 0.71 1.4 - 4 Input leakage current II -2 2 uA Output leakage current IOZ -5 5 uA Output High Current(Normal strengh driver) ;VOUT = VTT + 0.84V IOH -16.8 mA Output High Current(Normal strengh driver) ;VOUT = VTT - 0.84V IOL 16.8 mA Output High Current(Half strengh driver) ;VOUT = VTT + 0.45V IOH -9 mA Output High Current(Half strengh driver) ;VOUT = VTT - 0.45V IOL 9mA 9.0 General Description 10.0 Absolute Maximum Rating 11.0 DC Operating Conditions |
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