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IRGP20B120UD-E Datasheet(PDF) 2 Page - International Rectifier

Part No. IRGP20B120UD-E
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRGP20B120UD-E
2
www.irf.com
Electric al C h aracteristics @ T J = 25°C (u n les s o th erw ise sp ecified )
P aram eter
M in.
Typ.
M ax. U nits
C onditions
Fig.
V (BR)CES
Collecto r-to -E m itter Breakdo wn Voltage
1200
V
V GE = 0 V ,Ic = 250 µA
∆V
(B R)CE S / ∆Tj
Temperatu re Coeff. of Breakd o wn Voltage
+1 .2
V /°C V GE = 0 V , Ic = 1 m A ( 25 -125
o
C )
3.05
3.45
IC = 20A , V GE = 15V
5, 6
Collecto r-to -E m itter Saturation
3.37
3.80
IC = 25A , V GE = 15V
7, 9
V CE(on)
Voltage
4.23
4.85
V
IC = 40A , V GE = 15V
10
3.89
4.50
IC = 20A , V GE = 15V , T J = 125°C
11
4.31
5.06
IC = 25A , V GE = 15V , T J = 125°C
V GE(th)
Gate Thre sh o ld Volta g e
4.0
5 .0
6.0
V
V CE = V GE, IC = 250 µA
9,10,11,12
∆V
GE (th) / ∆Tj
Temperatu re Coeff. of Th re shold Volta ge
- 1 .2
mV/
o C V CE = V GE, IC = 1 m A (25 -125
o
C )
g fe
Forw ard Tra n sco n ductance
13.6
15.7
17.8
S
V CE = 50V , IC = 20A , P W = 80µs
250
V GE = 0 V , V CE = 1200V
ICES
Zero Gate Voltage Collecto r Curre n t
420
750
µA
V GE = 0 V , V CE = 1200V , T J = 125°C
1482
2200
V GE = 0 V , V CE = 1200V , T J = 150°C
1.67
1.96
IC = 20A
V FM
Diode Forw ard Vo ltage Drop
1.76
2.06
V
IC = 25A
8
1.73
2.03
IC = 20A , T J = 125°C
1.87
2.18
IC = 25A , T J = 125°C
IGES
Gate-to -E mitter Leakage Current
±100
nA
V GE = ±2 0 V
Sw itc h in g C h aracte ristic s @ T J = 25°C (u n less o th erw ise sp ecified )
P aram eter
M in.
Typ.
M ax. U nits
C onditions
Fig.
Q g
Tota l Gate charge (turn-o n )
169
254
IC = 20A
23
Q ge
Gate - Emitte r Charge (turn-on)
24
36
nC
V CC = 600V
CT 1
Q gc
Gate - Colle ctor Charg e (turn-on)
82
126
V GE = 15V
E on
Turn -On Switch ing Loss
850
1050
IC = 20A , V CC = 600V
CT 4
E off
Turn -O ff Switch ing Loss
425
650
µJ
V GE = 1 5 V , R g = 5 Ω, L = 200µH
WF 1
E tot
T o ta l S w itch in g L o ss
1275
1800
T J = 2 5
o
C, Energy lo sse s in clude ta il
and diode re ve rse re co ve ry
WF 2
E on
T u rn -o n S w itch in g L o ss
1350
1550
Ic = 2 0 A , V CC = 600V
13, 15
E off
T u rn -o ff S w itch in g L o ss
610
875
µJ
V GE = 1 5 V , R g = 5 Ω, L = 200µH
CT 4
E tot
T o ta l S w itch in g L o ss
1960
2425
T J = 1 2 5
o
C, Energy lo sse s in clude ta il
and diode re ve rse re co ve ry
WF 1 & 2
td ( on)
T u rn - o n d e la y tim e
50
65
Ic = 2 0 A , V CC = 600V
14, 16
tr
R ise tim e
20
30
ns
V GE = 1 5 V , R g = 5 Ω, L = 200µH
CT 4
td ( o ff)
T u rn - o ff d e la y tim e
204
230
T J = 125
o
C
WF 1
tf
Fall time
24
35
WF 2
C ies
Input Capacitance
2200
V GE = 0 V
C oes
Output Capacitance
210
pF
V CC = 30V
22
C res
Reve rse Tra n sfer Capacitance
85
f = 1.0 M H z
T J = 150
o
C , Ic = 120A
4
R BSO A
Reve rse bias sa fe op erating a rea
F U L L S Q UA RE
V CC = 1000V , V P = 1200V
CT 2
Rg = 5 Ω, V GE = + 15V to 0V
T J = 150
o
C
CT 3
SC SO A
Short Circuit Safe Ope ra tin g Area
1 0
----
----
µ s
V CC = 900V , V P = 1200V
WF 4
Rg = 5 Ω, V GE = + 15V to 0V
E rec
Reve rse re co ve ry energy of th e diode
1600
2100
µJ
T J = 125
o
C
17,18,19
tr r
Diode R e ve rse re co ve ry time
300
ns
V CC = 600V , Ic = 20A
20, 21
Ir r
Peak Reve rse Reco ve ry Curren t
32
36
A
V GE = 1 5 V , R g = 5 Ω, L = 200µH
CT 4, WF 3
Le
In te rnal Emitte r Inductance
13
nH
Measured 5 mm from the package.




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