©2005 Fairchild Semiconductor Corporation

1

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FCP20N60 / FCPF20N60 Rev. A1

July 2005

FCP20N60 / FCPF20N60

600V N-Channel MOSFET

Features

• 100% avalanche tested

Description

voltage MOSFET family that is utilizing an advanced charge

balance mechanism for outstanding low on-resistance and

lower gate charge performance.

This advanced technology has been tailored to minimize con-

duction loss, provide superior switching performance, and with-

stand extreme dv/dt rate and higher avalanche energy.

Consequently, SuperFET is very suitable for various AC/DC

power conversion in switching mode operation for system min-

iaturization and higher efficiency.

Absolute Maximum Ratings

*Drain current limited by maximum junction temperature

Thermal Characteristics

S

D

G

TO-220

G

S

D

TO-220F

G

S

D

Symbol

Parameter

FCP20N60

FCPF20N60

Unit

Drain-Source Voltage

600

V

Drain Current

20

12.5

20*

12.5*

A

A

Drain Current

- Pulsed

(Note 1)

60

60*

A

Gate-Source voltage

± 30

V

Single Pulsed Avalanche Energy

(Note 2)

690

mJ

Avalanche Current

(Note 1)

20

A

Repetitive Avalanche Energy

(Note 1)

20.8

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

Power Dissipation

- Derate above 25

°C

208

1.67

39

0.3

W

W/

°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

°C

Symbol

Parameter

FCP20N60 FCPF20N60

Unit

Thermal Resistance, Junction-to-Case

0.6

3.2

°C/W

Thermal Resistance, Junction-to-Ambient

62.5

62.5

°C/W