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BD616LV4017EI-70 Datasheet(PDF) 1 Page - Brilliance Semiconductor |
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BD616LV4017EI-70 Datasheet(HTML) 1 Page - Brilliance Semiconductor |
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1 / 10 page  Revision 2.1 Jan. 2004 1 A4 A3 A2 A1 A0 CE DQ0 DQ1 DQ2 DQ3 VCC GND DQ4 DQ5 DQ6 DQ7 WE A17 A16 A15 A14 A13 A5 A6 A7 OE UB LB DQ15 DQ14 DQ13 DQ12 GND VCC DQ11 DQ10 DQ9 DQ8 NC A8 A9 A10 A11 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 BS616LV4017EC BS616LV4017EI R0201-BS616LV4017 POWER DISSIPATION SPEED ( ns ) STANDBY ( I CCSB1 , Max ) ( I CC , Max ) PRODUCT FAMILY OPERATING TEMPERATURE Vcc RANGE 55ns :3.0~5.5V Vcc= 3.0V Vcc = 3.0V PKG TYPE BS616LV4017DC DICE BS616LV4017EC TSOP2-44 BS616LV4017AC BGA-48-0608 +0 O C to +70O C 2.4V ~ 5.5V 55 /70 5uA 30uA 21mA 53mA BS616LV4017DI DICE BS616LV4017EI TSOP2-44 BS616LV4017AI BGA-48-0608 -40 O C to +85OC 2.4V ~ 5.5V 55 /70 10uA 60uA 22mA 55mA Very Low Power/Voltage CMOS SRAM 256K X 16 bit • Wide Vcc operation voltage : 2.4~5.5V • Very low power consumption : Vcc = 3.0V C-grade: 26mA (@55ns) operating current I-grade: 27mA (@55ns) operating current C-grade: 21mA (@70ns) operating current I-grade: 22mA (@70ns) operating current 0.45uA (Typ.) CMOS standby current Vcc = 5.0V C-grade: 63mA (@55ns) operating current I-grade: 65mA (@55ns) operating current C-grade: 53mA (@70ns) operating current I-grade: 55mA (@70ns) operating current 2.0uA (Typ.) CMOS standby current • High speed access time : -55 55ns -70 70ns • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation The BS616LV4017 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.45uA at 3.0V/25oC and maximum access time of 55ns at 3.0V/85oC. Easy memory expansion is provided by an active LOW chip enable (CE) ,active LOW output enable(OE) and three-state output drivers. The BS616LV4017 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV4017 is available in DICE form, JEDEC standard 44-pin TSOP Type II package and 48-ball BGA package. DESCRIPTION FEATURES Row Decoder Memory Array 2048 x 2048 Column I/O Write Driver Sense Amp Column Decoder Data Buffer Output A9 A8 A7 Data Buffer Input Control Gnd Vcc OE WE CE DQ15 DQ0 A0 A13 A14 A15 A1 A2 16 16 16 16 14 128 2048 BLOCK DIAGRAM 2048 22 A17 A16 A10 A12 A6 A11 A3 Address Input Buffer A5 Address Input Buffer . . . . UB . . . . LB PRODUCT FAMILY PIN CONFIGURATIONS Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice. BS616LV4017 A4 BSI Operating • Data retention supply voltage as low as 1.5V • Easy expansion with CE and OE options • I/O Configuration x8/x16 selectable by LB and UB pin Vcc= 5.0V Vcc = 5.0V 70ns :2.7~5.5V 70ns 70ns |
Similar Part No. - BD616LV4017EI-70 |
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Similar Description - BD616LV4017EI-70 |
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