JCS4N65VE-O-I-N-B datasheet(2/13 Pages) JSMC

Part #	JCS4N65VE-O-I-N-B

Description	Electronic ballast

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Manufacturer	JSMC [JILIN SINO-MICROELECTRONICS CO., LTD.]

Direct Link	http://www.hwdz.com.cn

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2 / 13 page

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JCS4N65E

版本：201607C

2/13

绝对最大额定值

ABSOLUTE RATINGS (Tc=25℃)

*漏极电流由最高结温限制

*Drain current limited by maximum junction temperature

项

目

Parameter

符

号

Symbol

数

值

Value

单

位

Unit

JCS4N65FE

(TO-220MF-K1/TO-220MF-K2)

JCS4N65RE/VE

最高漏极－源极直流电压

Drain-Source Voltage

VDSS

650

V

连续漏极电流

Drain Current

-continuous

ID

T=25℃

T=100℃

4.0

A

2.5

A

最大脉冲漏极电流（注 1）

Drain Current - pulse

（note 1）

IDM

16

A

最高栅源电压

Gate-Source Voltage

VGSS

±30

V

单脉冲雪崩能量（注 2）

Single Pulsed Avalanche

Energy

note 2）

EAS

256

mJ

雪崩电流（注 1）

Avalanche Current

（note 1）

IAR

4.0

A

重复雪崩能量（注 1）

Repetitive Avalanche Current

（note 1）

EAR

11.0

mJ

二极管反向恢复最大电压变化

速率（注 3）

Peak Diode Recovery

dv/dt

（note 3）

dv/dt

5.5

V/ns

耗散功率

Power Dissipation

PD

TC=25℃

-Derate

above

25℃

40.1

176

W

0.32

1.41

W/

℃

最高结温及存储温度

Operating and Storage

Temperature Range

TJ，TSTG

-55～+150

℃

引线最高焊接温度

Maximum Lead Temperature

for Soldering Purposes

TL

300

℃

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JCS4N65VE-O-I-N-B Datasheet(PDF) 2 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

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