AF4910NSLA datasheet(2/5 Pages) ANACHIP

Part #	AF4910NSLA

Description	Dual N-Channel 30-V (D-S) MOSFET

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Manufacturer	ANACHIP [Anachip Corp]

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AF4910N

Dual N-Channel 30-V (D-S) MOSFET

Anachip Corp.

www.anachip.com.tw

Rev. 1.1 Jul 20, 2004

2/5

Absolute Maximum Ratings (T

A=25ºC unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±20

V

TA=25ºC

10

ID

Continuous Drain Current (Note 1)

TA=70ºC

8.2

A

IDM

Pulsed Drain Current (Note 2)

±50

A

IS

Continuous Source Current (Diode Conduction) (Note 1)

2.3

A

TA=25ºC

2.1

PD

Power Dissipation (Note 1)

TA=70ºC

1.3

W

TJ, TSTG

Operating Junction and Storage Temperature Range

-55 to 150

ºC

Thermal Resistance Ratings

Symbol

Parameter

Maximum

Units

RθJC

Maximum Junction-to-Case (Note 1)

t < 5 sec

40

ºC/W

RθJA

Maximum Junction-to-Ambient (Note 1)

t < 5 sec

60

ºC/W

Note 1: surface Mounted on 1”x 1” FR4 Board.

Note 2: Pulse width limited by maximum junction temperature

Specifications (T

A=25ºC unless otherwise noted)

Limits

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Static

V(BR)DSS Drain-Source breakdown Voltage

VGS=0V, ID=250uA

30

-

V

VGS(th)

Gate-Threshold Voltage

VDS= VGS, ID=250uA

1

1.95

3.0

V

IGSS

Gate-Body Leakage

VDS=0V, VGS=20V

-

±100

nA

VDS=24V, VGS=0V

-

1

IDSS

Zero Gate Voltage Drain Current

VDS=24V, VGS=0V,

TJ=55ºC

-

25

uA

ID(on)

On-State Drain Current (Note 3)

VDS=5V, VGS=10V

20

-

A

VGS=10V, ID=10A

-

11

13.5

VGS=4.5V, ID=8A

-

15

20

rDS(on)

Drain-Source On-Resistance (Note 3)

VGS=10V, ID=15A,

TJ=55ºC

-

12.5

15

mΩ

gfs

Forward Tranconductance (Note 3)

VDS=15V, ID=10A

-

40

-

S

VSD

Diode Forward Voltage

IS=2.3A, VGS=0V

-

0.7

1.1

V

Dynamic (Note 4)

Qg

Total Gate Charge

-

20

34

Qgs

Gate-Source Charge

-

7.0

-

Qgd

Gate-Drain Charge

VDS=15V, VGS=5V,

ID=10A

-

7.0

-

nC

Switching

td(on)

Turn-On Delay Time

-

20

30

tr

Rise Time

-

9

20

td(off)

Turn-Off Delay Time

-

70

102

tf

Fall-Time

VDD=25, RL=25Ω,

ID=1A, VGEN=10V

-

20

81

trr

Source-Ddrain Reverse Recovery Time

IF=2.3A, Di/Dt=100A/us

-

41

80

nS

Note 3: Pulse test: PW < 300us duty cycle < 2%.

Note 4: Guaranteed by design, not subject to production testing.

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