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AF4910NSLA Datasheet(PDF) 2 Page - Anachip Corp |
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AF4910NSLA Datasheet(HTML) 2 Page - Anachip Corp |
2 / 5 page AF4910N Dual N-Channel 30-V (D-S) MOSFET Anachip Corp. www.anachip.com.tw Rev. 1.1 Jul 20, 2004 2/5 Absolute Maximum Ratings (T A=25ºC unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V TA=25ºC 10 ID Continuous Drain Current (Note 1) TA=70ºC 8.2 A IDM Pulsed Drain Current (Note 2) ±50 A IS Continuous Source Current (Diode Conduction) (Note 1) 2.3 A TA=25ºC 2.1 PD Power Dissipation (Note 1) TA=70ºC 1.3 W TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 ºC Thermal Resistance Ratings Symbol Parameter Maximum Units RθJC Maximum Junction-to-Case (Note 1) t < 5 sec 40 ºC/W RθJA Maximum Junction-to-Ambient (Note 1) t < 5 sec 60 ºC/W Note 1: surface Mounted on 1”x 1” FR4 Board. Note 2: Pulse width limited by maximum junction temperature Specifications (T A=25ºC unless otherwise noted) Limits Symbol Parameter Test Conditions Min. Typ. Max. Unit Static V(BR)DSS Drain-Source breakdown Voltage VGS=0V, ID=250uA 30 - - V VGS(th) Gate-Threshold Voltage VDS= VGS, ID=250uA 1 1.95 3.0 V IGSS Gate-Body Leakage VDS=0V, VGS=20V - - ±100 nA VDS=24V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V, TJ=55ºC - - 25 uA ID(on) On-State Drain Current (Note 3) VDS=5V, VGS=10V 20 - - A VGS=10V, ID=10A - 11 13.5 VGS=4.5V, ID=8A - 15 20 rDS(on) Drain-Source On-Resistance (Note 3) VGS=10V, ID=15A, TJ=55ºC - 12.5 15 mΩ gfs Forward Tranconductance (Note 3) VDS=15V, ID=10A - 40 - S VSD Diode Forward Voltage IS=2.3A, VGS=0V - 0.7 1.1 V Dynamic (Note 4) Qg Total Gate Charge - 20 34 Qgs Gate-Source Charge - 7.0 - Qgd Gate-Drain Charge VDS=15V, VGS=5V, ID=10A - 7.0 - nC Switching td(on) Turn-On Delay Time - 20 30 tr Rise Time - 9 20 td(off) Turn-Off Delay Time - 70 102 tf Fall-Time VDD=25, RL=25Ω, ID=1A, VGEN=10V - 20 81 trr Source-Ddrain Reverse Recovery Time IF=2.3A, Di/Dt=100A/us - 41 80 nS Note 3: Pulse test: PW < 300us duty cycle < 2%. Note 4: Guaranteed by design, not subject to production testing. |
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