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MMBT2222A Datasheet(PDF) 1 Page - Shenzhen Luguang Electronic Technology Co., Ltd |
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MMBT2222A Datasheet(HTML) 1 Page - Shenzhen Luguang Electronic Technology Co., Ltd |
1 / 3 page Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING: 1P MAXIMUM RATINGS (TA=25 ℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Power Dissipation 350 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55to+150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 10μA, IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 10 nA Collector cut-off current ICEX VCE=60V, VBE(off)=3V 10 nA Emitter cut-off current IEBO VEB= 3V,IC=0 0.1 μA hFE(1) VCE=10V, IC=150mA 100 300 hFE(2) VCE=10V, IC= 0.1mA 40 DC current gain hFE(3) VCE=10V, IC= 500mA 42 Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA IC=150 mA, IB=15mA 1 0.3 V Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA IC=150 mA, IB=15mA 0.6 2.0 1.2 V Transition frequency fT VCE=20V, IC= 20mA f=100MHz 300 MHz Delay time td 10 nS Rise time tr VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA 25 nS Storage time tS 225 nS Fall time tf VCC=30V, IC=150mA IB1=-IB2=15mA 60 nS 1. BASE 2.EMITTER 3.COLLECTOR MMBT2222A SOT-23 Transistor(NPN) Dimensions in inches and (millimeters) SOT-23 CLASSIFICATION OF hFE(1) Rank L H Range 100-200 200-300 Features ht t p : // www.lgesemi.com mail:lge@lgesemi.com Revision:201 70701-P1 |
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