NTE191 datasheet(2/2 Pages) NTE

Part #	NTE191

Description	Silicon Complementary Transistors High Voltage Video Amplifier

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Manufacturer	NTE [NTE Electronics]

Direct Link	http://www.nteinc.com

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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF Characteristics (Cont’d)

Collector Cutoff Current

ICBO

VCB = 200V, IE = 0

–

0.2

µA

Emitter Cutoff Current

IEBO

VBE = 6V, IC = 0

–

0.1

µA

ON Characteristics

DC Current Gain (NTE191 & NTE240)

hFE

IC = 1mA, VCE = 10V, Note 3

25

–

NTE191

IC = 10mA, VCE = 10V, Note 3

40

–

IC = 30mA, VCE = 10V, Note 3

40

–

NTE240

IC = 10mA, VCE = 10V, Note 3

30

–

IC = 30mA, VCE = 10V, Note 3

30

–

Collector–Emitter Saturation Voltage

VCE(sat)

IC = 30mA, IB = 3mA

–

0.75

V

Base–Emitter ON Voltage

NTE191

VBE(on)

IC = 30mA, VCE = 10V

–

0.85

V

NTE240

–

0.90

V

Dynamic Characteristics

Current Gain–Bandwidth Product

NTE191

fT

IC = 10mA, VCE = 20V,

45

–

MHz

NTE240

f = 100MHz, Note 2

60

–

MHz

Collector–Base Capacitance

NTE191

Ccb

VCB = 20V, IE = 0, f = 1MHz

–

3.0

pF

NTE240

–

8.0

pF

Note 3. Pulse Test: Pulse Width

≤ 300µs, Duty Cycle ≤ 2%.

Collector Connected to Tab

EB C

.050 (1.27)

.380 (9.65) Max

.280 (7.25) Max

.128 (3.28) Dia

.200 (5.08)

.100 (2.54)

.218

(5.55)

.160

(4.06)

.475

(12.0)

Min

.995

(25.3)

.100 (2.54)

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