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UCC28780DR Datasheet(PDF) 8 Page - Texas Instruments |
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UCC28780DR Datasheet(HTML) 8 Page - Texas Instruments |
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8 / 49 page  8 UCC28780 SLUSD12 – OCTOBER 2017 www.ti.com Product Folder Links: UCC28780 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Electrical Characteristics (continued) Over operating free-air temperature range, VVDD = 15V, RRDM = 115 kΩ, RRTZ = 140 kΩ, VBUR= 1.2 V, VSET = 0 V, RNTC = 50 k Ω, VVS = 4 V, VSWS = 0 V, IFB = 0 μA, IHVG = 25 μA, and -40 ⁰C < TJ = TA < 125 ⁰C (unless otherwise noted) PARAMETER TEST CONDITION MIN TYP MAX UNIT PROTECTION VOVP Over-voltage threshold VVS increasing 4.6 V VOCP Over-current threshold VCS increasing 1.2 VCST(OPP) Overpower threshold on CS pin IVSL = 0 μA 600 mV IVSL = -333 μA 537 IVSL = -666 μA 453 IVSL = -1.25 mA 425 KOPP OPP threshold voltage ratio VCST(OPP) ratio between IVSL = 0 μA and IVSL = -1.25 mA 1.41 V/V tOPP OPP fault timer IFB = 0 A 160 ms IVSL(RUN) VS line-sense run current Current out of VS pin increasing 353 µA IVSL(STOP) VS line-sense stop current Current out of VS pin decreasing 320 KVSL VS line-sense ratio IVSL(STOP) / IVSL(RUN) 0.9 A/A tBO Brown-out detection delay time IVSL < IVSL(STOP) 60 ms RRDM(TH) RRDM threshold for CS pin fault 55 k Ω tCSF0 Max. PWML on time for detecting CS pin fault RRDM < RRDM(TH) for VSET = 0 V 1 µs tCSF1 Max. PWML on time for detecting CS pin fault VSET = 5 V 2 µs tFDR Fault reset delay timer OCP, OPP, OVP, SCP, or CS pin fault 1.5 s TJ(stop) Thermal shut-down temperature Internal junction temperature 125 160 °C NTC INPUT RNTCTH NTC shut-down resistance RNTC decreasing 10.0 k Ω RNTCR NTC recovery resistance RNTC increasing 22.5 k Ω INTC NTC pull-up current, out of pin RNTC = 12 kΩ 100 µA BUR INPUT AND LOW POWER MODE KBUR-CST Ratio from VBUR to VCST VCST between VCST(OPP1) and 0.7 V 4 V/V fBR(UP) Upper threshold of burst rate frequency 34 kHz fBR(LR) Lower threshold of burst rate frequency 21 25 29 kHz fLPM Burst rate frequency in low power mode 21 25 29 kHz RTZ INPUT tZ(MAX) Maximum programmable dead time from PWMH low to PWML high RRTZ = 200 kΩ, IVSL = -1 mA, VSET = 5 V 490 ns tZ(MIN) Minimum programmable dead time from PWMH low to PWML high RRTZ = 56 kΩ, IVSL = -1 mA, VSET = 0 V 70 ns tZ Dead time from PWMH low to PWML high IVSL = -200 μA 158 175 193 ns IVSL = -450 μA 150 ns IVSL = -733 μA 109 125 139 ns KTZ TZ compensation ratio TZ ratio between IVSL = -200 μA and IVSL = -733 μA 1.4 V/V |
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