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PTLV75710PDRVR Datasheet(PDF) 11 Page - Texas Instruments |
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PTLV75710PDRVR Datasheet(HTML) 11 Page - Texas Instruments |
11 / 22 page Device IN OUT GND COUT CIN Schottky Diode Internal Body Diode Input Voltage Output Voltage Output Voltage in normal regulation. Dropout VOUT = VIN - VDO VIN = VOUT(nom) + VDO Response time for LDO to get back into regulation. Load current discharges output voltage. Time 11 TLV757P www.ti.com SBVS322 – OCTOBER 2017 Product Folder Links: TLV757P Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Application Information (continued) Figure 8. Startup into Dropout 8.1.4 Reverse Current As with most LDOs, excessive reverse current can damage this device. Reverse current flows through the body diode on the pass element instead of the normal conducting channel. At high magnitudes, this current flow degrades the long-term reliability of the device, as a result of one of the following conditions: • Degradation caused by electromigration • Excessive heat dissipation • Potential for a latch-up condition Conditions where reverse current can occur are outlined in this section, all of which can exceed the absolute maximum rating of VOUT > VIN + 0.3 V: • If the device has a large COUT and the input supply collapses with little or no load current • The output is biased when the input supply is not established • The output is biased above the input supply If reverse current flow is expected in the application, external protection must be used to protect the device. Figure 9 shows one approach of protecting the device. Figure 9. Example Circuit for Reverse Current Protection Using a Schottky Diode |
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