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PTLV75710PDRVR Datasheet(PDF) 11 Page - Texas Instruments

Part # PTLV75710PDRVR
Description  1-A, Low IQ, Small Size, Low Dropout Regulator
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
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PTLV75710PDRVR Datasheet(HTML) 11 Page - Texas Instruments

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Device
IN
OUT
GND
COUT
CIN
Schottky Diode
Internal Body Diode
Input Voltage
Output Voltage
Output Voltage in
normal regulation.
Dropout
VOUT = VIN - VDO
VIN = VOUT(nom) + VDO
Response time for
LDO to get back into
regulation.
Load current discharges
output voltage.
Time
11
TLV757P
www.ti.com
SBVS322 – OCTOBER 2017
Product Folder Links: TLV757P
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Copyright © 2017, Texas Instruments Incorporated
Application Information (continued)
Figure 8. Startup into Dropout
8.1.4 Reverse Current
As with most LDOs, excessive reverse current can damage this device.
Reverse current flows through the body diode on the pass element instead of the normal conducting channel. At
high magnitudes, this current flow degrades the long-term reliability of the device, as a result of one of the
following conditions:
Degradation caused by electromigration
Excessive heat dissipation
Potential for a latch-up condition
Conditions where reverse current can occur are outlined in this section, all of which can exceed the absolute
maximum rating of VOUT > VIN + 0.3 V:
If the device has a large COUT and the input supply collapses with little or no load current
The output is biased when the input supply is not established
The output is biased above the input supply
If reverse current flow is expected in the application, external protection must be used to protect the device.
Figure 9 shows one approach of protecting the device.
Figure 9. Example Circuit for Reverse Current Protection Using a Schottky Diode


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