SGP30N60,

SGB30N60

SGW30N60

1Jul-02

Fast IGBT in NPT-technology

• 75% lower E

combined with low conduction losses

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

• NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

Package

Ordering Code

SGP30N60

SGB30N60

SGW30N60

600V

30A

2.5V

150

°C

TO-220AB

TO-263AB

TO-247AC

Q67040-A4463

Q67041-A4713

Q67040-S4237

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

600

V

DC collector current

°C

°C

41

30

112

Turn off safe operating area

≤ 600V, T

j

≤ 150°C

-

112

A

Gate-emitter voltage

±20

V

Avalanche energy, single pulse

Ω,

°C

165

mJ

Short circuit withstand time

1)

≤ 600V, T

j

≤ 150°C

10

µs

Power dissipation

°C

250

W

Operating junction and storage temperature

-55...+150

°C

G

C

E

P-TO-220-3-1

(TO-220AB)

P-TO-247-3-1

(TO-247AC)

P-TO-263-3-2 (D²-PAK)

(TO-263AB)