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SGW30N60 Datasheet(PDF) 3 Page - Infineon Technologies AG

Part # SGW30N60
Description  Fast IGBT in NPT-technology
Download  12 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SGW30N60 Datasheet(HTML) 3 Page - Infineon Technologies AG

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SGP30N60,
SGB30N60
SGW30N60
3Jul-02
Switching Characteristic, Inductive Load, at Tj=25
°C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
t d( o n)
-44
53
Rise time
t r
-34
40
Turn-off delay time
t d( of f)
-
291
349
Fall time
t f
-58
70
ns
Turn-on energy
Eon
-
0.64
0.77
Turn-off energy
Eoff
-
0.65
0.85
Total switching energy
Ets
T j =2 5
°C,
VCC =400V, IC =30A,
VGE =0/15V,
R G =11
Ω,
L σ
1)
=1 80n H,
C σ
1) =900pF
Energy losses include
“tail” and diode
reverse recovery.
-
1.29
1.62
mJ
Switching Characteristic, Inductive Load, at Tj=150
°C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
t d( o n)
-44
53
Rise time
t r
-34
40
Turn-off delay time
t d( of f)
-
324
389
Fall time
t f
-67
80
ns
Turn-on energy
Eon
-
0.98
1.18
Turn-off energy
Eoff
-
0.92
1.19
Total switching energy
Ets
T j =150
°C
VCC =400V, IC =30A,
VGE =0/15V,
R G = 1 1
Ω,
L σ
1)
=1 80n H,
C σ
1) =900pF
Energy losses include
“tail” and diode
reverse recovery.
-
1.90
2.38
mJ
1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.


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