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PESD12VS2UT Datasheet(PDF) 6 Page - NXP Semiconductors |
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PESD12VS2UT Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 13 page 2004 Apr 15 6 Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package PESDxS2UT series Notes 1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2. 2. Measured either across pins 1 and 3 or pins 2 and 3. Rdiff differential resistance PESD3V3S2UT IR =1mA −− 400 Ω PESD5V2S2UT IR =1mA −− 80 Ω PESD12VS2UT IR =1mA −− 200 Ω PESD15VS2UT IR =1mA −− 225 Ω PESD24VS2UT IR = 0.5 mA −− 300 Ω SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT GRAPHICAL DATA 001aaa147 103 102 104 Ppp (W) 10 tp (µs) 1104 103 10 102 (1) (2) Fig.4 Peak pulse power dissipation as a function of pulse time; typical values. Tamb =25 °C. tp = 8/20 µs exponential decay waveform; see Fig.2. (1) PESD3V3S2UT and PESD5V2S2UT. (2) PESD12VS2UT, PESD15VS2UT, PESD24VS2UT Tj (°C) 0 200 150 50 100 001aaa193 0.4 0.8 1.2 Ppp 0 Ppp(25˚C) Fig.5 Relative variation of peak pulse power as a function of junction temperature; typical values. |
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