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P242393 Datasheet(PDF) 3 Page - Advanced Semiconductor |
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P242393 Datasheet(HTML) 3 Page - Advanced Semiconductor |
3 / 9 page HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS18A 10235 S. 51 st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 07/15/2010 Phoenix, Az. 85044 © 2009 HVVi Semiconductors, Inc. All Rights Reserved. 3 HVV1012-550 High Voltage, High Ruggedness L-Band High Power Pulsed Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty For Airborne DME Applications ! ! ! ! ! ! ! Notes: 1) Rated at TCASE = 25°C 2) All parameters measured under pulsed conditions at 12W input power measured at the 10% point of the pulse with pulse width = 10µsec, duty cycle = 1% and VDD = 50V, IDQ = 100mA in a broadband matched test fixture. 3) Amount of gate voltage required to attain nominal quiescent current. 4) Guaranteed by design. "#$%&'! ()*)$+,+*! @&0R1,1&0D! S10! I#E14)'! S)>! /01,D! ,*A! N1D+!I1$+! UV997:SWX! 3! cP7! 7:! 0D! ,`A! U)''!I1$+! UV997:SWX! 3! c97! 7:! 0D! (2A! (.'D+!2*&&E! UV997:SWX! 3! :O9! :OP! RZ! PULSE CHARACTERISTICS |
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