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QPL6202SB Datasheet(PDF) 2 Page - TriQuint Semiconductor |
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QPL6202SB Datasheet(HTML) 2 Page - TriQuint Semiconductor |
2 / 8 page QPL6202 Ultra-Low Noise, High Gain LNA Data Sheet Rev D Subject to change without notice - 2 of 8 - www.qorvo.com ® PRELIMINARY Absolute Maximum Ratings Parameter Rating Storage Temperature −65 to +150 °C Supply Voltage +7V RF Input Power, CW, 50 Ω, T=25 °C +33 dBm RF Input Power, WCDMA, 10dB PAR +27 dBm RF Input Power, CW, OFF State +33 dBm Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Recommended Operating Conditions Parameter Min Typ Max Units Supply Voltage (VDD) 3.3 4.5 5.25 V Bias Voltage (Vbias) 3.3 3.6 5.25 V TCASE −40 +105 °C Tj for >106 hours MTTF +190 °C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications at +25 ˚C Parameter Conditions Min Typ Max Units Operational Frequency Range 2320 2345 MHz Test Frequency 2332 MHz Gain 20.0 21.2 22.4 dB Input Return Loss 8.5 dB Output Return Loss 17 dB Noise Figure1 0.55 0.7 dB Output P1dB +18.5 dBm Output IP3 Pout =+2 dBm/tone, Δf=1 MHz +34 +36 dBm Power Shutdown Control (pin 6) On state 0 0.63 V Off state (Power down) 1.17 VDD V Current, IDD2 On state 55 mA Off state (Power down) 3 mA Shutdown pin current, ISD VPD ≥ 1.17 V 140 µA Switching Speed LNA ON to OFF 500 ns LNA OFF to ON 500 ns Thermal Resistance, θjc channel to case 48 °C/W Test conditions unless otherwise noted: VDD = +4.5V, Vbias = +3.6V, Temp=+25°C, 2332MHz, 50 Ω system Note: 1) Noise Figure data has input trace loss de-embedded 2) Icq set by external 4.3K resistor |
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