QPD1018EVB datasheet(1/17 Pages) TRIQUINT

Part #	QPD1018EVB

Description	500W, 50V, 2.7 ??3.1 GHz, GaN RF IMFET

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Manufacturer	TRIQUINT [TriQuint Semiconductor]

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QPD1018

500W, 50V, 2.7

– 3.1 GHz, GaN RF IMFET

Datasheet Rev. A, Jun 9, 2017 | Subject to change without notice

- 1 of 17 -

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Key Features

 Frequency: 2.7 to 3.1 GHz

 Output Power (P3dB)1: 575 W

 Linear Gain1: 17.7 dB

 Typical PAE3dB1: 67.9%

 Operating Voltage: 50 V

 Low thermal resistance package

 Pulse capable

Note 1: @ 2.9 GHz

17.40 x 24.00 x 4.31 mm

Product Overview

The QPD1018 is a 500 W (P3dB) internally matched discrete

GaN on SiC HEMT which operates from 2.7 to 3.1 GHz on

a 50V supply rail. The device is GaN IMFET fully matched

to 50

Ω in an industry standard air cavity package and is

ideally suited for military radar.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Functional Block Diagram

Applications

 Military radar

 Civilian radar

 Test instrumentation

Ordering info

Part No.

ECCN

Description

QPD1018

3A001.B.3.A

Tray of 18 QPD1018

QPD1018S2

3A001.B.3.A

Pack of 2 QPD1018

QPD1018EVB

EAR99

2.7

– 3.1 GHz EVB

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Qorvo, Inc	QPD1018EVB	1Mb / 16P	500W, 50V, 2.7 – 3.1 GHz, GaN RF IMFET Aug 24, 2018

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