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QPD1013SQ Datasheet(PDF) 7 Page - TriQuint Semiconductor |
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QPD1013SQ Datasheet(HTML) 7 Page - TriQuint Semiconductor |
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7 / 25 page  QPD1013 150W, 65V, DC – 2.7 GHz, GaN RF Transistor Rev. A - 7 of 25 - Disclaimer: Subject to change without notice © 2017 Qorvo www.qorvo.com Thermal and Reliability Information - Pulsed Parameter Conditions Values Units Thermal Resistance (θJC) 85 °C Case 90 W Pdiss, Pulsed 100us 10% DC 2.0 °C/W Maximum Channel Temperature (TCH) 200 °C Median Lifetime (TM) 4.0E8 Hrs Thermal Resistance (θJC) 85 °C Case 100 W Pdiss, Pulsed 100us 10% DC 1.7 °C/W Maximum Channel Temperature (TCH) 215 °C Median Lifetime (TM) 1.0E8 Hrs Thermal Resistance (θJC) 85 °C Case 110 W Pdiss, Pulsed 100us 10% DC 1.5 °C/W Maximum Channel Temperature (TCH) 232 °C Median Lifetime (TM) 3.0E7 Hrs Thermal Resistance (θJC) 85 °C Case 120 W Pdiss, Pulsed 100us 10% DC 1.4 °C/W Maximum Channel Temperature (TCH) 251 °C Median Lifetime (TM) 8.0E6 Hrs |
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