QPD1011S2 datasheet(2/25 Pages) TRIQUINT

Part #	QPD1011S2

Description	30 ??1200 MHz, 50 V, 7 W GaN RF Input-Matched Transistor

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Manufacturer	TRIQUINT [TriQuint Semiconductor]

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QPD1011

30 – 1200 MHz, 50 V, 7 W GaN RF Input-Matched Transistor

Datasheet Rev. A, March 24, 2017 | Subject to change without notice

- 2 of 25 -

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Absolute Maximum Ratings1

Parameter

Rating

Units

Breakdown Voltage,BVDG

+145

V

Gate Voltage Range, VG

-8 to +2

V

Drain Current, IDMAX

1.46

A

Gate Current Range, IG

See page 19.

mA

Power Dissipation, PDISS

14.72

W

RF Input Power, Pulse, 1.3

GHz, T = 25 °C2

+27

dBm

Channel Temperature, TCH

275

°C

Mounting Temperature

(30 Seconds)

320

°C

Storage Temperature

−65 to +150

°C

Notes:

1.

Operation of this device outside the parameter ranges

given above may cause permanent damage.

2.

Pulsed, 100 uS PW, 10% DC

Recommended Operating Conditions1

Parameter

Min

Typ

Max Units

Operating Temp. Range

−40

+25

+85

°C

Drain Voltage Range, VD

+32

+50

+55

V

Drain Bias Current, IDQ

20

mA

Drain Current, ID4

–

300

–

mA

Gate Voltage, VG3

–

−2.8

–

V

Channel Temperature (TCH)

–

250

°C

Power Dissipation (PD)2,4

–

13

W

Power Dissipation (PD), CW2

–

10

W

Notes:

1.

Electrical performance is measured under conditions noted

in the electrical specifications table. Specifications are not

guaranteed over all recommended operating conditions.

2.

Package base at 85 °C

3.

To be adjusted to desired IDQ

4.

Pulsed, 100 uS PW, 10% DC

Measured Load Pull Performance – Power Tuned1

Parameter

Typical Values

Units

Frequency, F

0.6

0.8

1.0

1.2

GHz

Drain Voltage, VD

50

V

Drain Bias Current, IDQ

20

mA

Output Power at 3dB

compression, P3dB

39.7

39.4

39.1

dBm

Power Added Efficiency at 3dB

compression, PAE3dB

59.4

58.7

49.3

49.1

%

Gain at 3dB compression, G3dB

15.7

18

18.3

16.6

dB

Notes:

1.

Pulsed, 100 uS Pulse Width, 10% Duty Cycle

2.

Characteristic Impedance, Zo = 33.4

.

Measured Load Pull Performance – Efficiency Tuned1

Parameter

Typical Values

Units

Frequency, F

0.6

0.8

1.0

1.2

GHz

Drain Voltage, VD

50

V

Drain Bias Current, IDQ

20

mA

Output Power at 3dB

compression, P3dB

37.7

38.4

37.3

37.4

dBm

Power Added Efficiency at 3dB

compression, PAE3dB

71.6

64.1

60.1

55.4

%

Gain at 3dB compression, G3dB

17.9

19.2

19.5

19.1

dB

Notes:

1.

Pulsed, 100 uS Pulse Width, 10% Duty Cycle

2.

Characteristic Impedance, Zo = 33.4

.

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