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QPD1011S2 Datasheet(PDF) 2 Page - TriQuint Semiconductor |
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QPD1011S2 Datasheet(HTML) 2 Page - TriQuint Semiconductor |
2 / 25 page QPD1011 30 – 1200 MHz, 50 V, 7 W GaN RF Input-Matched Transistor Datasheet Rev. A, March 24, 2017 | Subject to change without notice - 2 of 25 - www.qorvo.com Absolute Maximum Ratings1 Parameter Rating Units Breakdown Voltage,BVDG +145 V Gate Voltage Range, VG -8 to +2 V Drain Current, IDMAX 1.46 A Gate Current Range, IG See page 19. mA Power Dissipation, PDISS 14.72 W RF Input Power, Pulse, 1.3 GHz, T = 25 °C2 +27 dBm Channel Temperature, TCH 275 °C Mounting Temperature (30 Seconds) 320 °C Storage Temperature −65 to +150 °C Notes: 1. Operation of this device outside the parameter ranges given above may cause permanent damage. 2. Pulsed, 100 uS PW, 10% DC Recommended Operating Conditions1 Parameter Min Typ Max Units Operating Temp. Range −40 +25 +85 °C Drain Voltage Range, VD +32 +50 +55 V Drain Bias Current, IDQ 20 mA Drain Current, ID4 – 300 – mA Gate Voltage, VG3 – −2.8 – V Channel Temperature (TCH) – – 250 °C Power Dissipation (PD)2,4 – – 13 W Power Dissipation (PD), CW2 – – 10 W Notes: 1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. 2. Package base at 85 °C 3. To be adjusted to desired IDQ 4. Pulsed, 100 uS PW, 10% DC Measured Load Pull Performance – Power Tuned1 Parameter Typical Values Units Frequency, F 0.6 0.8 1.0 1.2 GHz Drain Voltage, VD 50 50 50 50 V Drain Bias Current, IDQ 20 20 20 20 mA Output Power at 3dB compression, P3dB 39.7 39.4 39.4 39.1 dBm Power Added Efficiency at 3dB compression, PAE3dB 59.4 58.7 49.3 49.1 % Gain at 3dB compression, G3dB 15.7 18 18.3 16.6 dB Notes: 1. Pulsed, 100 uS Pulse Width, 10% Duty Cycle 2. Characteristic Impedance, Zo = 33.4 . Measured Load Pull Performance – Efficiency Tuned1 Parameter Typical Values Units Frequency, F 0.6 0.8 1.0 1.2 GHz Drain Voltage, VD 50 50 50 50 V Drain Bias Current, IDQ 20 20 20 20 mA Output Power at 3dB compression, P3dB 37.7 38.4 37.3 37.4 dBm Power Added Efficiency at 3dB compression, PAE3dB 71.6 64.1 60.1 55.4 % Gain at 3dB compression, G3dB 17.9 19.2 19.5 19.1 dB Notes: 1. Pulsed, 100 uS Pulse Width, 10% Duty Cycle 2. Characteristic Impedance, Zo = 33.4 . |
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Similar Description - QPD1011S2 |
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