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LH28F800BGB-L Datasheet(PDF) 4 Page - Sharp Corporation |
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LH28F800BGB-L Datasheet(HTML) 4 Page - Sharp Corporation |
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4 / 43 page  LH28F800BG-L/BGH-L (FOR TSOP, CSP) - 4 - PIN DESCRIPTION SYMBOL TYPE NAME AND FUNCTION A0-A18 INPUT ADDRESS INPUTS : Inputs for addresses during read and write operations. Addresses are internally latched during a write cycle. DATA INPUT/OUTPUTS : Inputs data and commands during CUI write cycles; outputs data during memory array, status register and identifier code read cycles. Data pins float to high-impedance when the chip is deselected or outputs are disabled. Data is internally latched during a write cycle. CE# INPUT CHIP ENABLE : Activates the device’s control logic, input buffers, decoders and sense amplifiers. CE#-high deselects the device and reduces power consumption to standby levels. RESET/DEEP POWER-DOWN : Puts the device in deep power-down mode and resets internal automation. RP#-high enables normal operation. When driven low, RP# inhibits write operations which provide data protection during power transitions. Exit from deep power-down sets the device to read array mode. With RP# = VHH, block erase or word write can operate to all blocks without WP# state. Block erase or word write with VIH < RP# < VHH produce spurious results and should not be attempted. OE# INPUT OUTPUT ENABLE : Gates the device’s outputs during a read cycle. WE# INPUT WRITE ENABLE : Controls writes to the CUI and array blocks. Addresses and data are latched on the rising edge of the WE# pulse. WP# INPUT WRITE PROTECT : Master control for boot blocks locking. When VIL, locked boot blocks cannot be erased and programmed. READY/BUSY : Indicates the status of the internal WSM. When low, the WSM is performing an internal operation (block erase or word write). RY/BY#-high indicates that the WSM is ready for new commands, block erase is suspended, and word write is inactive, word write is suspended, or the device is in deep power-down mode. RY/BY# is always active and does not float when the chip is deselected or data outputs are disabled. VPP SUPPLY BLOCK ERASE AND WORD WRITE POWER SUPPLY : For erasing array blocks or writing words. With VPP ≤ VPPLK, memory contents cannot be altered. Block erase and word write with an invalid VPP (see Section 6.2.3 "DC CHARACTERISTICS") produce spurious results and should not be attempted. DEVICE POWER SUPPLY : Internal detection configures the device for 2.7 V, 3.3 V or 5 V operation. To switch from one voltage to another, ramp VCC down to GND and then ramp VCC to the new voltage. Do not float any power pins. With VCC ≤ VLKO, all write attempts to the flash memory are inhibited. Device operations at invalid VCC voltage (see Section 6.2.3 "DC CHARACTERISTICS") produce spurious results and should not be attempted. GND SUPPLY GROUND : Do not float any ground pins. NC NO CONNECT : Lead is not internal connected; recommend to be floated. DQ0-DQ15 INPUT/ OUTPUT RP# INPUT/ RY/BY# OUTPUT VCC SUPPLY |
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