© 2001 IXYS All rights reserved

1 - 2

V

DSS

I

D25

R

DS(on)

600 V

38 A

70 m

Ω

Ω

Ω

Ω

Ω

CoolMOS Power MOSFET

N-Channel Enhancement Mode

Low R

Package with Electrically Isolated Base

IXKR 40N60C

Features

q

ISOPLUS247 package with DCB Base

- Electrical isolation towards the heatsink

- Low coupling capacitance to the heatsink for

reduced EMI

- High power dissipation

- High temperature cycling capability

of chip on DCB

- JEDEC TO247AD compatible

- Easy clip assembly

- High blocking capability

- Low on resistance

- Avalanche rated for unclamped

inductive switching (UIS)

- Low thermal resistance

due to reduced chip thickness

q

Enhanced total power density

Applications

q

Switched mode power supplies (SMPS)

q

Uninterruptible power supplies (UPS)

q

Power factor correction (PFC)

q

Welding

q

Inductive heating

Isolated base*

E153432

G

D

G = Gate

D = Drain

S = Source

* Patent pending

CoolMOS is a trademark of

Infineon Technologies AG.

Advanced Technical Information

IXYS reserves the right to change limits, test conditions and dimensions.

MOSFET

Symbol

Conditions

Maximum Ratings

V

DSS

T

600

V

V

GS

±20

V

I

D25

T

38

A

I

D90

T

25

A

dv/dt

V

6

V/ns

T

E

AS

I

1.8

J

E

AR

I

5 µH; T

1

mJ

Symbol

Conditions

Characteristic Values

(T

min.

typ.

max.

R

DSon

V

70 m

Ω

V

GSth

V

3.5

5.5

V

I

DSS

V

25°C

25

µA

T

60

µA

I

GSS

V

100

nA

Q

g

220

nC

Q

gs

55

nC

Q

gd

125

nC

t

d(on)

30

ns

t

r

95

ns

t

d(off)

100

ns

t

f

10

ns

V

F

(reverse conduction) I

0.9

1.1

V

R

thJC

0.45 K/W

V

V

I