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IXKR40N60C Datasheet(PDF) 1 Page - IXYS Corporation |
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IXKR40N60C Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 2 page © 2001 IXYS All rights reserved 1 - 2 V DSS I D25 R DS(on) 600 V 38 A 70 m Ω Ω Ω Ω Ω CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low R DSon, High VDSS MOSFET Package with Electrically Isolated Base IXKR 40N60C Features q ISOPLUS247 package with DCB Base - Electrical isolation towards the heatsink - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation - High temperature cycling capability of chip on DCB - JEDEC TO247AD compatible - Easy clip assembly q fast CoolMOS power MOSFET - 2nd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness q Enhanced total power density Applications q Switched mode power supplies (SMPS) q Uninterruptible power supplies (UPS) q Power factor correction (PFC) q Welding q Inductive heating Isolated base* ISOPLUS 247TM E153432 G D G = Gate D = Drain S = Source * Patent pending CoolMOS is a trademark of Infineon Technologies AG. Advanced Technical Information IXYS reserves the right to change limits, test conditions and dimensions. MOSFET Symbol Conditions Maximum Ratings V DSS T VJ = 25°C to 150°C 600 V V GS ±20 V I D25 T C = 25°C 38 A I D90 T C = 90°C 25 A dv/dt V DS < VDSS; IF ≤ 50A;diF/dt≤ 200A/µs 6 V/ns T VJ = 150°C E AS I D = 10 A; L = 36 mH; TC = 25°C 1.8 J E AR I D = 20 A; L = 5 µH; T C = 25°C 1 mJ Symbol Conditions Characteristic Values (T VJ = 25°C, unless otherwise specified) min. typ. max. R DSon V GS = 10 V; ID = ID90 70 m Ω V GSth V DS = 20 V; ID = 3 mA; 3.5 5.5 V I DSS V DS = VDSS; VGS = 0 V; TVJ = 25°C 25 µA T VJ = 125°C 60 µA I GSS V GS = ±20 V; VDS = 0 V 100 nA Q g 220 nC Q gs 55 nC Q gd 125 nC t d(on) 30 ns t r 95 ns t d(off) 100 ns t f 10 ns V F (reverse conduction) I F = 20 A; VGS = 0 V 0.9 1.1 V R thJC 0.45 K/W V GS= 10 V; VDS = 350 V; ID = 50 A V GS= 10 V; VDS = 380 V; I D = 25 A; RG = 1.8 Ω |
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