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FCL3310M Datasheet(PDF) 2 Page - FutureWafer Tech Co.,Ltd |
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FCL3310M Datasheet(HTML) 2 Page - FutureWafer Tech Co.,Ltd |
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2 / 5 page  0.01 0.1 1 10 0.1 1 10 100 1000 Parameter Symbol Condition Min. Typ. Max. Units Reverse Stand-off Voltage VRWM 3.3 V Snap back Voltage VSB ISB=50mA 2.8 V Reverse Leakage Current IR VR=3.3V,I/O-GND 1 uA Clamping Voltage VC IPP=1A tp=8/20us 6 V IPP=24A tp=8/20us 15 V Junction Capacitance C I/O Pin capacitance to GND.Vdc=0V,f=1MHZ 1.5 pf Electrical Characteristics Rating and characteristic curve Futurewafer Technology co., Ltd., FIGURE 1 Non-repetitive Peak pulse power V.S pulse time tp-Pulse Width(µS) 600W,8/20µS E1609F8B-FW-001 FCL3310M Low Capacitance TVS array |
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