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IRL3716 Datasheet(PDF) 2 Page - International Rectifier

Part No. IRL3716
Description  HEXFET Power MOSFET
Download  11 Pages
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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 2 page
background image
IRL3716/3716S/3716L
2
www.irf.com
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
–––
0.93
1.3
V
TJ = 25°C, IS = 72A, VGS = 0V
ƒ
–––
0.80
–––
TJ = 125°C, IS = 72A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
180
280
ns
TJ = 25°C, IF = 72A, VR=20V
Qrr
Reverse Recovery Charge
–––
87
130
nC
di/dt = 100A/µs
ƒ
trr
Reverse Recovery Time
–––
190
280
ns
TJ = 125°C, IF = 72A, VR=20V
Qrr
Reverse Recovery Charge
–––
85
130
nC
di/dt = 100A/µs
ƒ
Parameter
Min.
Typ.
Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.021
––– V/°C Reference to 25°C, ID = 1mA
–––
3.0
4.0
VGS = 10V, ID = 90A
ƒ
–––
4.0
4.8
VGS = 4.5V, ID = 72A
ƒ
VGS(th)
Gate Threshold Voltage
1.0
–––
3.0
V
VDS = VGS, ID = 250µA
–––
–––
20
µA
VDS = 16V, VGS = 0V
–––
–––
250
VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
200
VGS = 16V
Gate-to-Source Reverse Leakage
–––
–––
-200
nA
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Symbol
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
640
mJ
IAR
Avalanche Current

–––
72
A
Avalanche Characteristics
S
D
G
Diode Characteristics
180
†
720
A
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
100
–––
–––
S
VDS = 10V, ID = 72A
Qg
Total Gate Charge
–––
53
79
ID = 72A
Qgs
Gate-to-Source Charge
–––
17
26
nC
VDS = 16V
Qgd
Gate-to-Drain ("Miller") Charge
–––
24
35
VGS = 4.5V
Qoss
Output Gate Charge
–––
50
75
VGS = 0V, VDS = 10V
Rg
Gate Resistance
1.5
td(on)
Turn-On Delay Time
–––
18
–––
VDD = 10V
tr
Rise Time
–––
140
–––
ID = 72A
td(off)
Turn-Off Delay Time
–––
38
–––
RG = 3.9Ω
tf
Fall Time
–––
36
–––
VGS = 4.5V
ƒ
Ciss
Input Capacitance
–––
5090 –––
VGS = 0V
Coss
Output Capacitance
–––
3440 –––
VDS = 10V
Crss
Reverse Transfer Capacitance
–––
560
–––
ƒ = 1.0MHz
VSD
Diode Forward Voltage
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(on)
Static Drain-to-Source On-Resistance
m
pF




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