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IRL3716 Datasheet(PDF) 1 Page - International Rectifier

Part No. IRL3716
Description  HEXFET Power MOSFET
Download  11 Pages
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo 

 
 1 page
background image
Symbol
Parameter
Max.
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-to-Source Voltage
± 20
V
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
180
†
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
130
A
IDM
Pulsed Drain Current

720
PD @TC = 25°C
Maximum Power Dissipation
ƒ
210
W
PD @TC = 100°C
Maximum Power Dissipation
ƒ
100
W
Linear Derating Factor
1.4
W/°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 175
°C
www.irf.com
1
10/8/04
IRL3716
IRL3716S
IRL3716L
SMPS MOSFET
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
20V
Notes
 through ‡ are on page 11
Absolute Maximum Ratings
D2Pak
IRL3716S
TO-220AB
IRL3716
TO-262
IRL3716L
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
‡
–––
0.72
RθCS
Case-to-Sink, Flat, Greased Surface
„
0.50
–––
°C/W
RθJA
Junction-to-Ambient
„
–––
62
RθJA
Junction-to-Ambient (PCB mount)
…
–––
40
Applications
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
l Active Oring
4.0m
180A†
PD - 94403A




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