HAL504 datasheet(8/44 Pages) ETC

Part #	HAL504

Description	Hall Effect Sensor Family

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HAL5xx

8

Micronas

3.6. Electrical Characteristics at TJ = –40 °C to +170 °C , VDD = 3.8 V to 24 V, as not otherwise specified in Conditions

Typical Characteristics for TJ = 25 °C and VDD = 12 V

Symbol

Parameter

Pin No.

Min.

Typ.

Max.

Unit

Conditions

IDD

Supply Current

1

2.3

3

4.2

mA

TJ = 25 °C

IDD

Supply Current over

Temperature Range

1

1.6

3

5.2

mA

VDDZ

Overvoltage Protection

at Supply

1

–

28.5

32

V

IDD = 25 mA, TJ = 25 °C,

t = 20 ms

VOZ

Overvoltage Protection at Output

3

–

28

32

V

IOH = 25 mA, TJ = 25 °C,

t = 20 ms

VOL

Output Voltage

3

–

130

280

mV

IOL = 20 mA, TJ = 25 °C

VOL

Output Voltage over

Temperature Range

3

–

130

400

mV

IOL = 20 mA

IOH

Output Leakage Current

3

–

0.06

0.1

µA

Output switched off,

TJ = 25 °C, VOH = 3.8 to 24 V

IOH

Output Leakage Current over

Temperature Range

3

–

10

µA

Output switched off,

TJ ≤150 °C, VOH = 3.8 to 24 V

fosc

Internal Oscillator

Chopper Frequency

–

49

62

–

kHz

TJ = 25 °C,

VDD = 4.5 V to 24 V

fosc

Internal Oscillator Chopper Fre-

quency over Temperature Range

–

38

62

–

kHz

ten(O)

Enable Time of Output after

Setting of VDD

1

–

30

70

µs

VDD = 12 V 1)

tr

Output Rise Time

3

–

75

400

ns

VDD = 12 V, RL = 820 Ohm,

CL = 20 pF

tf

Output Fall Time

3

–

50

400

ns

VDD = 12 V, RL = 820 Ohm,

CL = 20 pF

RthJSB

case

SOT-89B

Thermal Resistance Junction

to Substrate Backside

–

150

200

K/W

Fiberglass Substrate

30 mm x 10 mm x 1.5mm,

pad size see Fig. 3–3

RthJA

case

TO-92UA

Thermal Resistance Junction

to Soldering Point

–

150

200

K/W

1) B > BON + 2 mT or B < BOFF – 2 mT for HAL 50x,

B > BOFF + 2 mT or B < BON – 2 mT for HAL 51x

Fig. 3–3: Recommended pad size SOT-89B

Dimensions in mm

5.0

2.0

1.0

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