GLT44016-25TC datasheet(7/17 Pages) ETC

Part #	GLT44016-25TC

Description	256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

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G -LINK

GLT44016

256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

Aug, 2000(Rev.3.1)

G-Link Technology Corporation

2701Northwestern Parkway

Santa Clara, CA 95051, U.S.A.

G-Link Technology Corporation,Taiwan

6F, No. 24-2, Industry E. RD. IV, Science Based

Industrial Park, Hsin Chu, Taiwan.

- 7 -

AC Characteristics

25

28

30

35

40

50

Parameter

Symbol Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit Notes

Data Set-Up Time

tDS

0

ns

Data Hold Time

tDH

4

7

8

ns

Data Hold Time Referenced to

RAS

tDHR

19

27

32

36

37

ns

RAS to WE E Delay Time

tRWD

36

43

49

54

64

ns

CAS to WE Delay Time

tCWD

19

21

23

24

26

ns

Column Address to

WE Delay Time

tAWD

24

27

30

32

37

ns

RAS to CAS Precharge Time

tRPC

0

ns

Access Time from

CAS Precharge

tCPA

15

18

20

22

27

ns

EDO Page Mode Cycle Time

tPC

10

12

13

15

20

ns

EDO Page Mode Read-Modify-Write Cycle Time

tPRWC

35

39

43

45

50

ns

CAS Precharge Time (EDO Page Mode)

tCP

3

4.5

5

6

8

ns

RAS Pulse Width (EDO Page Mode Only)

tRASP

25

100k

28

100k

30

100K

35

100k

40

100k

50

100k ns

Access Time from

OE

tOEA

8

10

11

12

14

ns

OE to Data Delay Time

tOED

5

7

8

ns

OE to Output High-Z

tOEZ

3

7

3

7

3

7

3

8

3

8

0

8

ns

OE Command Hold Time

tOEH

5

6

7

ns

Data Output Hold after

CAS low

tDOH

4

5

ns

RAS to Output High-Z

tREZ

3

7

3

7

3

7

3

8

3

8

3

8

ns

WE to Output High-Z

tWEZ

3

10

3

10

3

10

3

10

3

10

3

12

ns

OE to CAS Hold Time

tOCH

8

ns

CAS Hold Time to OE

tCHO

8

ns

OE Precharge Time

tOEP

8

ns

CAS Set-Up Time for CAS -before- RAS Cycle

tCSR

5

10

ns

CAS Hold Time for CAS -before- RAS Cycle

tCHR

6

7

8

10

ns

Transition Time

tT

1.5

50

1.5

50

1.5

50

1.5

50

1.5

50

2

50

ns

Refresh Period

tREF

8

ms

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