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ECCSR0011-MH1-H Datasheet(PDF) 1 Page - E-CMOS Corporation |
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ECCSR0011-MH1-H Datasheet(HTML) 1 Page - E-CMOS Corporation |
1 / 4 page 1.0A Surface Mount Super Fast Rectifiers-50-600V E-CMOS Corp. (www.ecmos.com.tw) Page 1 of 4 5D13N-Rev. F001 ECCSR0011-MH1~ ECCSR0018-MH1 Features ◆ Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. ◆ Low profile surface mounted application in order to optimize board space. ◆ Tiny plastic SMD package. ◆ Super fast recovery time for switching mode application. ◆ High current & surge capability. ◆ Glass passivated chip junction. ◆ Lead-free parts meet RoHS requirments. ◆ Suffix "-H" indicates Halogen free parts, ex.ECCSR0011-MH1-H. Mechanical Data ◆ Epoxy : UL94-V0 rated flame retardant ◆ Case : Molded plastic, DO-214AC /SMA-S ◆ Terminals :Plated terminals, solderable per MIL-STD-750, Method 2026 ◆ Polarity : Indicated by cathode band ◆ Mounting Position : Any ◆ Weight : Approximated 0.05 gram Maximum Ratings and Electrical Characteristics (T A=25℃ ℃ ℃ ℃ unless otherwise noted) PARAMETER SYMBOLS 0011 -MH1 0012 -MH1 0013 -MH1 0014 -MH1 0015 -MH1 0016 -MH1 0017 -MH1 0018 -MH1 UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 500 600 V Maximum RMS voltage VRMS 35 70 105 140 210 280 350 420 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 500 600 V Maximum average forward rectified current IO 1.0 A Peak forward surge current 8.3ms single half sine-wave(JEDEC method) IFSM 25 A Maximum forward voltage at IF=1.0A VF 0.95 1.25 1.70 V Maximum DC reverse current TJ =25°C at rated DC blocking voltage TJ =125°C IR 5.0 100 uA Typical junction capacitance (Note 2) CJ 10 pF Maximum reverse recovery time (Note 1) Trr 35 ns Operating junction temperature range TJ -55 to +150 ℃ Storage temperature range TSTG -55 to +150 ℃ |
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