EC733322

30V、5.8A N-Channel MOSFET

Page 2 of 4

4J01-Rev.F002

Parameter

Symbol

Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

=250μA

30

V

Zero Gate Voltage Drain Current

1

μA

Gate-Body Leakage Current

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

=250μA

1

1.9

3

V

Drain-Source On-State Resistance

34

43

mΩ

22

28

mΩ

Forward Transconductance

5

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

F=1.0MHz

F=1.0MHz

680

PF

Output Capacitance

100

PF

Reverse Transfer Capacitance

75

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

=3Ω

5

nS

Turn-on Rise Time

4

nS

Turn-Off Delay Time

21

nS

Turn-Off Fall Time

5

nS

Total Gate Charge

14

nC

Gate-Source Charge

1.8

nC

Gate-Drain Charge

3.2

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

0.7

1

V

Thermal Resistance

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.